TITLE

High-performance thin-film transistors from optimized polycrystalline silicon films

AUTHOR(S)
Meakin, D. B.; Coxon, P. A.; Migliorato, P.; Stoemenos, J.; Economou, N. A.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1894
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The performance of thin-film transistors fabricated in unrecrystallized (small-grain) polcrystalline silicon is shown to be greatly improved by depositing the films at much lower pressures than normally used in the low-pressure chemical vapor deposition process. Electronic measurements on completed devices are presented and related to the film structure by transmission electron microscopy examination.
ACCESSION #
9823368

 

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