TITLE

Electrical measurements on n+-GaAs/undoped AlAs/n-GaAs and n+-GaAs/undoped AlAs:GaAs superlattice/n-GaAs capacitors

AUTHOR(S)
Kirby, P. B.; Kerr, T. M.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1808
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report current versus voltage measurements as a function of temperature (I-V-T) and capacitance-voltage (C-V) measurements on n+-GaAs/insulator/n-GaAs capacitors where the insulators used are (i) AlAs and (ii) a GaAs:AlAs superlattice. For the n+-GaAs/AlAs/n-GaAs structures activation energies of 0.38 eV are observed over the temperature range 100–300 K indicating that conduction takes place by thermionic emission through the X-band states of AlAs. For the superlattice case a measured activation energy of ∼0.33 eV for thermionic emission has a contribution of ∼0.2 eV resulting from the band bending in the superlattice, as revealed by our C-V measurements. We discuss the implications of these results for transport in superlattices and as a technique for determining miniband energies.
ACCESSION #
9823340

 

Related Articles

  • Spatiotemporal Structures in a Transversely Extended Semiconductor System. Astrov, Yu. A.; Purwins, H.-G. // Technical Physics Letters;Nov2002, Vol. 28 Issue 11, p910 

    A semiconductor system with an N-shaped current-voltage characteristic can generate nonstationary structures that are inhomogeneous in the direction transverse to the current flow. In samples of semiinsulating GaAs with a large cross section, this effect is explained by a loss of stability of...

  • Role of intermediate temperature molecular beam epitaxy grown GaAs defects in tunneling and... Youtz, Andrew E.; Nabet, Bahram // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2697 

    Focuses on the role of defects in gallium arsenide grown semiconductors in tunneling and diffusion from Schottky contacts. Information on current transport in the semiconductor; Description of the model used explain the role of the defects.

  • Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma. Nak-Jin Seong; Soon-Gil Yoon; Seung-Jin Yeom; Hyun-Kyung Woo; Deok-Sin Kil; Jae-Sung Roh; Hyun-Chul Sohn // Applied Physics Letters;9/26/2005, Vol. 87 Issue 13, p132903 

    The nitrogen incorporation into the HfO2 films with an EOT (equivalent oxide thickness) of 9 Ã… was performed by N2-plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power...

  • A current-pulse generator with an intermediate storage for inductive-resistive load operation. Abdullin, E.; Kiselev, V.; Morozov, A.; Zhao, Yongpeng // Instruments & Experimental Techniques;Jul2011, Vol. 54 Issue 4, p504 

    The design and results of tests of a generator developed for obtaining a current of positive polarity with a duration of the first half-period of 110-130 ns, an amplitude of 40-70 kA in the single-pulse mode, and an amplitude of 30 kA at a pulse repetition rate of 10 Hz for 5 min in an...

  • Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks. Wen Luo; Tao Yuan; Yue Kuo; Jiang Lu; Jiong Yan; Way Kuo // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p202904 

    Charge trapping/detrapping and dielectric polarization/relaxation of high-k dielectrics have been investigated. Relaxation behaviors of TiN/SiO2/p-Si and TiN/Zr-doped HfOx/SiO2/p-Si capacitors were studied with a ramp-relax method. The latter shows a relaxation current, which signifies the...

  • Automatic tuning arc suppression coil current in a small Grounding System. ZHANG Hui Lin; ZHAO Yu Bo; LIU Feng Zhen // Applied Mechanics & Materials;2014, Issue 620, p398 

    Equipped Petersen coil systems can compensate for the capacitance of the line current, the single- phase ground fault current flows through the capacitor grounding point for the minimum point of the arc of a reliable ground fault arc, to avoid reigniting, prevent arcing ground fault point phase...

  • Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs. Kim, Eun Kyu; Cho, Hoon Young; Min, Suk-Ki; Choh, Sung Ho; Namba, Susumu // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1380 

    Presents a study that examined leakage current effects for the midgap levels in an aluminum/ gallium arsenide semiconductor junction using isothermal capacitance transient spectroscopy. Analysis of the temperature dependence of the leakage current density; Effect of leakage current on...

  • Self-consistent resonant states and phase coherence in a wide double-barrier structure. Choi, K. K.; Newman, P. G.; Folkes, P. A.; Iafrate, G. J. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p359 

    We present experimental tunneling current-voltage characteristics for a wide (1040-Ã…-wide well) double-barrier structure; concomitant differential conductance data show a series of oscillations in the differential conductance-voltage characteristics. By using a self-consistent analysis, we...

  • Visualization of current filaments in n-GaAs by photoluminescence quenching. Eberle, W.; Herschinger, J.; Margull, U.; Prettl, W.; Novak, V.; Kostial, H. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3329 

    Presents the visualization of current filaments in n-gallium arsenide by photoluminescence quenching. Observation on the low intensity and spatial homogeneity of irradiation; Visualization of filaments in dot contact and Corbino geometry samples; Formation of filament structures in Corbino discs.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics