Electrical measurements on n+-GaAs/undoped AlAs/n-GaAs and n+-GaAs/undoped AlAs:GaAs superlattice/n-GaAs capacitors

Kirby, P. B.; Kerr, T. M.
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1808
Academic Journal
We report current versus voltage measurements as a function of temperature (I-V-T) and capacitance-voltage (C-V) measurements on n+-GaAs/insulator/n-GaAs capacitors where the insulators used are (i) AlAs and (ii) a GaAs:AlAs superlattice. For the n+-GaAs/AlAs/n-GaAs structures activation energies of 0.38 eV are observed over the temperature range 100–300 K indicating that conduction takes place by thermionic emission through the X-band states of AlAs. For the superlattice case a measured activation energy of ∼0.33 eV for thermionic emission has a contribution of ∼0.2 eV resulting from the band bending in the superlattice, as revealed by our C-V measurements. We discuss the implications of these results for transport in superlattices and as a technique for determining miniband energies.


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