GaAs structures with electron mobility of 5×106 cm2/V s

English, J. H.; Gossard, A. C.; Störmer, H. L.; Baldwin, K. W.
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1826
Academic Journal
Modulation-doped GaAs heterostructures with low-temperature electron mobilities of 5.0×106 cm2/V s at a two-dimensional electron areal density of 1.6×1011 cm-2 have been made. The mobilities are the highest ever observed in a semiconductor. Multiple quantum wells of GaAs prepared by similar methods showed electron mobilities up to 0.54×106 cm2/V s at an areal density of 5.3×1011 cm-2 per layer, which also exceeds any mobility value previously reported for multiple well structures. The structures were grown by molecular beam epitaxy with an atomic-plane sheet-doping technique.


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