Pressure dependence of electron transport in InP

Patel, D.; Sites, J. R.; Spain, I. L.
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1829
Academic Journal
Photoconductivity and Hall measurements in InP are presented for pressures up to 4 GPa using a diamond anvil cell. The application of pressure increases the direct energy band gap (E0), as seen by the shift of the photoconductivity edge to lower wavelength with increasing pressure. Hall measurements show a decrease in the electron mobility (μe) with pressure, due mainly to an increasing effective mass (m[ATOTHER]@B|[/ATOTHER] e). Analysis of the pressure dependence of μe shows that polar optical scattering is the dominant mechanism.


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