TITLE

InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy

AUTHOR(S)
Temkin, H.; Gershoni, D.; Panish, M. B.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1776
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy. Using 100-Å-wide wells of InGaAs, a room-temperature exciton shift of about 250 Å has been observed for a bias voltage of 6 V. At a wavelength of 1.64 μm a modulation depth of 35% has been achieved at a frequency of 500 MHz. We show that efficient modulation at shorter wavelength cannot be obtained in structures with thinner ternary wells. Instead, we propose and demonstrate InGaAsP modulators operating at a wavelength as short as 1.3 μm.
ACCESSION #
9823316

 

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