Resonant Raman effect in thin-layered AlAs-GaAs superlattices

Kobayashi, Naoki; Toriyama, Takeshi; Horikoshi, Yoshiji
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1811
Academic Journal
A new Raman line was found on ultrahigh AlAs-GaAs superlattices with an excitation energy near the band gap. The excitation profile revealed that the intensity of the new line was enhanced resonantly as well as those of the AlAs- and GaAs-like phonon lines as the excitation photon energy approached the photoluminescence peak energy. Polarization measurements showed that the enhanced lines were induced by the Fröhlich mechanism. The normal coordinate treatment of the lattice vibration indicates that these lines can probably be attributed to the longitudinal optical phonons of the E species.


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