Highly stable indium alloyed TbFe amorphous films for magneto-optic memory

Iijima, Tetsuo
June 1987
Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1835
Academic Journal
Indium alloyed TbFe amorphous films for use as a magneto-optic memory are proposed and studied. These TbFeIn films show strong resistance to corrosion and oxidation. Indium is effective in suppressing oxygen diffusion into the films. An oxygen diffusion coefficient of 5×10-25 m2/s is calculated for TbFeIn films incubated at room temperature. Activation energy is 1.3 eV. This value is over 1.5 times larger than that of TbFe films, where the value is obtained with ellipsometry measurements by R. Allen and G. A. N. Connell [J. Appl. Phys. 53, 2353 (1982)].


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