Interactions of amorphous TaxCu1-x (x=0.93 and 0.80) alloy films with Au overlayers and GaAs substrates

Oh, Jae E.; Woollam, John A.; Pouch, John J.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1722
Academic Journal
Amorphous Ta93Cu7 and Ta80Cu20 alloy films are prepared by co-sputtering of pure Ta and pure Cu targets with a rotating sample holder table. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealings are made in the temperature range from 200 to 800 °C. Resistivity change, x-ray diffraction, and Auger electron spectroscopy measurements are performed to find the chemical and metallurgical stabilities of these materials in this system. The reaction temperature for TaxCu1-x in contact with GaAs lies between 500 and 700 °C. For Au in contact with TaxCu1-x the reaction occurs at about 600 °C. Amorphous Ta93Cu7 shows different interdiffusion characteristics with surrounding elements than does Ta80Cu20.


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