Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layers

Adekoya, W. O.; Ali, M. Hage; Muller, J. C.; Siffert, P.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1736
Academic Journal
The solid phase epitaxial regrowth of implanted phosphorus amorphized <100> silicon during rapid thermal annealing (RTA) in the temperature range 475–600 °C has been studied using Rutherford backscattering and channeling measurements. Within the temperature range 475–550 °C, our results show an enhancement of growth rate (Vg) by a factor of 4 when compared with values reported in literature for processing in a conventional furnace, with an activation energy of 2.7±0.2 eV. For temperatures above 550 °C, a reduction of this enhancement effect sets in, with a fall in the enhancement factor from 4 at 550 °C to about 1.5 at 600 °C. Estimation of the absolute error in temperature measurement in the RTA furnace shows that the accelerated kinetics cannot be completely explained by such errors as they are small compared to the enhancement rate. These results therefore give evidence of RTA induced enhancement of growth rate during solid phase recrystallization of implantation-amorphized silicon.


Related Articles

  • A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon. Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p600 

    Presents a study that discovered a family of oxygen-related double donors generated around 450 °celcius in phosphorus-doped Czochralski silicon. Electrical resistivity and infrared measurements at room temperature; Similarities and differences between thermal donors and new thermal donors;...

  • Retardation of implantation damage annealing in InP due to local nonstoichiometry. Moriya, N.; Kalish, R.; Bahir, G. // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p2157 

    Discusses the use of Rutherford backscattering channeling experiments in studying the regrowth of phosphorus or silicon implanted indium phosphorus following thermal annealing. Relation of stoichiometric imbalance to the retardation of implantation; Role of ion implantation for microelectronic...

  • The thermoanalytical, infrared and pyrolysis-gas chromatography-mass spectrometric sifting of poly (methyl methacrylate) in the presence of phosphorus tribromide. Arshad, Muhammad; Masud, Khalid; Arif, Muhammad; Zaidi, Jamshed H.; Saeed, Aamer; Yasin, Tariq // Natural Science;Apr2010, Vol. 2 Issue 4, p307 

    The behaviour of poly(methyl methacrylate) was examined in the presence of phosphorus tribromide (PBr3) with varying concentrations. Films were cast from common solvent and subjected to TG, DTA, DTG, IR and Py-GC-MS for evaluating the degradation routes. Despite early decomposition of the...

  • Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing. Adekoya, Wale-Oluseyi; Muller, Jean-Claude; Siffert, Paul // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1240 

    Induced defects in Czochralski-grown n-type <111> 1–5 Ω cm silicon wafers due to high-temperature (800 °C/10 s; cooling rate[bar_over_tilde:_approx._equal_to]100 °C/s) rapid thermal annealing (RTA) have been studied using deep level transient spectroscopy. The samples processed...

  • Alignment of thermal donors in Si by uniaxial stress. Wagner, P.; Gottschalk, H.; Trombetta, J.; Watkins, G. D. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p346 

    Presents a study of the thermal donors generated in Czochralski-silicon heat treatment. Application of a large uniaxial stress during the formation process; Structure of the thermal donors.

  • Depletion of interstitial oxygen in silicon and the thermal donor model. Borenstein, Jeffrey T.; Singh, Vijay A.; Corbett, James W. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1287 

    Studies the depletion of interstitial oxygen in silicon and the thermal donor model. Prediction of an oxygen depletion rate which is in agreement with experimental findings; Models which predict the kinetics of thermal donor formation in silicon; Reason for the depletion of inerstitial oxygen.

  • Rate constants for light-enhanced thermal oxidation of silicon. Young, E. M.; Tiller, W. A. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p2086 

    Focuses on a study that presented rate constants for light-enhanced thermal oxidation of silicon. Parts of the photon-stimulated oxidation enhancement; Analytical approach to fundamental understanding of oxidation data; Thermal analysis of the samples.

  • SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study. Rehder, E. M.; Inoki, C. K.; Kuan, T. S.; Kuech, T. F. // Journal of Applied Physics;12/15/2003, Vol. 94 Issue 12, p7892 

    The strain relaxation behavior of Si[sub 0.82]Ge[sub 0.18] films on silicon-on-insulator (SOI) substrates was investigated for films grown beyond the critical thickness and strain-relaxed during growth and metastable films, grown beyond the critical thickness, which relaxed during subsequent...

  • Formation of deep thermal donors in heat-treated Czochralski silicon. Emtsev, V.V.; Oganesyan, G.A. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2375 

    Examines the formation of deep thermal donors in Czochralski silicon (Cz-Si). Separation of the contribution of deep donors from those of other donor families; Attribution of donor states to ribbonlike defects; Correlation of the variations in the formation of heat-treated Cz-Si with the deep...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics