Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si

Pukite, P. R.; Cohen, P. I.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1739
Academic Journal
We have used reflection high-energy electron diffraction to characterize the initial surface of misoriented Si (100) and then to follow the nucleation of GaAs. Measurement of the diffracted intensity along the length of the specular streak shows sharp structure due to an ordered array of steps. The initial surface contains monolayer steps. However, after exposing to an As4 flux above 650 °C, the surface morphology changes to multilayer steps with four times the original period. In contrast, below 650 °C, surface migration is inhibited and monolayer steps are retained. Subsequent growth of GaAs on either the monolayer- or multilayer-stepped surfaces yields single domain films. However, GaAs grown on the monolayer steps is misoriented toward the (111)A while GaAs grown on the multilayer steps is misoriented toward the (111)B.


Related Articles

  • Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition. Castagné, J.; Fontaine, C.; Bedel, E.; Munoz-Yague, A. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2372 

    Investigates the nucleation of gallium arsenide (GaAs) on silicon (Si) in molecular-beam epitaxy by Auger electron spectrometry and reflection high-energy electron diffraction. Restoration of stoichiometry and monocrystallinity; Description of the initial stages of GaAs/Si growth.

  • Role of aperiodic surface defects on the intensity of electron diffraction spots. Bullock, D. W.; Ding, Z.; Thibado, P. M.; LaBella, V. P. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2586 

    A random distribution of two-dimensional gallium arsenide (GaAs) islands is found to effect the intensity of the electron diffraction pattern from the GaAs(001) surface. By utilizing the spontaneous island formation phenomenon as well as submonolayer deposition, the island coverage is...

  • Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs. Yao, Takafumi; Takeda, Toshihiko // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p160 

    Atomic layer epitaxy of zinc chalcogenide single crystalline films on a (001) GaAs substrate is studied. It is observed that the average thickness per one cycle of opening and closing the shutters of the constituent elements corresponds to one monolayer thickness. The initial and successive...

  • Direct observation by reflection high-energy electron diffraction of amorphous-to-crystalline transition in the growth of Sb on GaAs(110). Savage, D. E.; Lagally, M. G. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1719 

    Direct evidence, using reflection high-energy electron diffraction, is found for a transition, at a specific thickness, from an amorphous to a crystalline state in Sb deposited on GaAs(110). After crystallization, Sb exists as small, 30–40 Å crystallites with a (0001) contact plane...

  • Realization of high mobility in inverted AlxGa1-xAs/GaAs heterojunctions. Cho, N. M.; Kim, D. J.; Madhukar, A.; Newman, P. G.; Smith, D. D.; Aucoin, T.; Iafrate, G. J. // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2037 

    We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid-nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high-energy electron-diffraction (RHEED) intensity dynamics determined optimized growth...

  • Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy. Chiu, T. H.; Tsang, W. T.; Cunningham, J. E.; Robertson, A. // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2302 

    Presents a study which reported the observations of a damped intensity oscillation using reflection high-energy electron diffraction during the growth of gallium arsenide by chemical beam epitaxy using triethylgallium and arsine. Experimental procedure; Description of the appearance of the...

  • Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs. Nabetani, Y.; Ishikawa, T.; Noda, S.; Sasaki, A. // Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p347 

    Presents a study which focused on the initial growth stage and optical properties of a three-dimensional indium arsenide structure on gallium arsenide. Results of reflection high-energy electron-diffraction observation; Findings of the transmission electron microscope observation; Details of...

  • Structure, chemistry, and band bending at Se-passivated GaAs(001) surfaces. Chambers, S. A.; Sundaram, V. S. // Applied Physics Letters;11/26/1990, Vol. 57 Issue 22, p2342 

    Se-passivated n-GaAs(001) surfaces prepared in a metalorganic chemical vapor desposition reactor have been investigated by means of x-ray photoelectron spectroscopy, low-energy electron diffraction, and x-ray photoelectron diffraction. The band bending of these free surfaces was as low as...

  • Reflection high energy electron diffraction intensity oscillations during the growth by.... Neave, J.H.; Zhang, J.; Zhang, X.M.; Fawcett, P.N.; Joyce, B.A. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p753 

    Investigates the reflection high energy electron diffraction intensity oscillation during the eptaxial growth of gallium arsenide(110) film. Use of molecular beam epitaxial technique; Dependence of the oscillation period on growth temperature, flux ratio and duration; Interpretation of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics