Investigation of GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs superlattices on Si substrates

Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoç, H.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1748
Academic Journal
We have studied the optical properties of lattice-matched GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs strained-layer superlattices grown on Si substrates using the photoreflectance technique. These preliminary results show that good quality III-V epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.


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