Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs

Fischer, David W.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1751
Academic Journal
After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon-induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.


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