TITLE

Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs

AUTHOR(S)
Fischer, David W.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1751
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86 and 0.94 eV. Comparison is made to the previously published photon-induced photoconductivity recovery and the results are used to construct a modified configuration coordinate model for the EL2 defect.
ACCESSION #
9823264

 

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