High-speed integrated heterojunction field-effect transistor photodetector: A gated photodetector

Taylor, G. W.; Simmons, J. G.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1754
Academic Journal
A new concept for a high-speed photodetector is described which promises very low noise with avalanche gain. The detector is constructed as an integrated circuit element in the heterojunction field-effect transistor technology and utilizes a unique n-n heterojunction interface formed by either metalorganic chemical vapor deposition or molecular beam epitaxy growth techniques. The degree of avalanching is controlled via an electrical third terminal.


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