Fowler–Nordheim tunneling and conduction-band discontinuity in GaAs/GaAlAs high electron mobility transistor structures

Smoliner, J.; Christanell, R.; Hauser, M.; Gornik, E.; Weimann, G.; Ploog, K.
June 1987
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1727
Academic Journal
Oscillatory structure is observed in the dI/dV and d2I/dV2 characteristics of conventional GaAs/GaAlAs high electron mobility transistor samples at liquid-helium temperature, which can be explained using a Fowler–Nordheim tunneling theory. The position of the oscillations allows a determination of the conduction-band discontinuity, and the depth of the deep donor levels in the GaAlAs for high aluminum concentrations. The fit of the data gives a value of ΔEc/ΔEg=0.61±0.04 for aluminum concentration 30, 36, and 40%. The deep donor level in the GaAlAs was determined to be 130 meV below the conduction band.


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