TITLE

Semiconductor topography in aqueous environments: Tunneling microscopy of chemomechanically polished (001) GaAs

AUTHOR(S)
Sonnenfeld, Richard; Schneir, J.; Drake, B.; Hansma, P. K.; Aspnes, D. E.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Scanning tunneling microscopy (STM) of (001) GaAs samples immersed in aqueous solutions has been used to assess the effectiveness of a standard bromine-methanol chemomechanical polish to produce flat surfaces over length scales from 5 to 1000 nm. The STM images reveal irregular 100-nm features coexisting with large areas of average roughness of the order of a few nanometers. The precision, stability, and reproducibility of these images suggest that immersion STM could be used to study surface chemical processes in real time.
ACCESSION #
9823246

 

Related Articles

  • P[sub 2]S[sub 5] passivation of GaAs surfaces for scanning tunneling microscopy in air. Dagata, J.A.; Tseng, W.; Bennett, J.; Schneir, J.; Harary, H.H. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3288 

    Presents a method for preparing GaAs substrate. Determination of surface quality by scanning tunneling microscopy (STM); Demonstration of the P[sub 2]S[sub 5] passivation method by x-ray photoelectron spectroscopy; Use of STM under ambient conditions in investigating surfaces.

  • Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures. Skala, S.L.; Chou, S.T. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p722 

    Examines the step bunching and terrace widening on gallium arsenide annealed at high temperatures. Application of scanning tunneling microscopy; Composition of the resulting surface; Increase in average terrace widths; Explanation of the observed step bunching.

  • Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized.... Hirota, Y.; Fukuda, T. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2837 

    Describes the scanning tunneling microscopy images of gallium arsenide (GaAs) (001) surface prepared by deoxygenated and de-ionized water (DODIW) treatment. Electrochemical reaction between DODIW and GaAs surface; Appearance of the missing-dimer rows and unit cells following ultrahigh vacuum...

  • Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements. Grandidier, B.; de la Broise, X.; Stiévenard, D.; Delerue, C.; Lannoo, M.; Stellmacher, M.; Bourgoin, J. // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21 

    Scanning tunneling microscopy (STM) is used to study low temperature grown GaAs layers. Excess As gives rise to a high concentration of As antisites (As[sub Ga]). On these point defects, tunneling spectroscopy reveals a band of donor states. In fact, the measured tunneling current results from a...

  • Formation of a Native-Oxide Structure on the Surface of n-GaAs under Natural Oxidation in Air. Torkhov, N.A. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1177 

    Using scanning tunneling microscopy, the native-oxide film on epitaxial n-GaAs(100) was found to be formed by tightly joining nanoclusters involving oxides of Ga and As as well as an excess As layer on the interface between Ga[sub 2]O[sub 3] and n-GaAs. The fractal structure of surface of the...

  • Low-temperature scanning tunneling microscopy of subsurface shallow dopants: depth dependence of the corrugation for the GaAs(110) surface. Depuydt, A.; Van Haesendonck, C.; Savinov, S.V.; Panov, V.I. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 8, pS209 

    Abstract. We investigated the corrugations induced by subsurface donor and acceptor atoms in low-temperature STM images of the (110) surface of doped GaAs single crystals. When the impurities are screened by Friedel charge-density oscillations, the height distribution for Si and Te donors...

  • Chemically selective adsorption of molecular oxygen on GaAs(100)c(2x8). Kruse, Peter; McLean, James G.; Kummel, Andrew C. // Journal of Chemical Physics;11/22/2000, Vol. 113 Issue 20 

    The chemisorption sites of molecular oxygen on the technologically important As-rich GaAs(100)c(2x8) surface were imaged with scanning tunneling microscopy (STM). The oxygen atoms insert into the arsenic-gallium backbonds and, subsequently, replace the arsenic atoms in the dimer rows. The...

  • Relative reactivity of arsenic and gallium dimers and backbonds during the adsorption of molecular oxygen on GaAs(100)(6x6). Kruse, Peter; McLean, James G.; Kummel, Andrew C. // Journal of Chemical Physics;11/22/2000, Vol. 113 Issue 20 

    The chemisorption sites of molecular oxygen on the mixed GaAs(100)(6x6) surface were imaged at room temperature using scanning tunneling microscopy (STM). This surface is terminated by both gallium dimers and arsenic dimers, neither of which react with oxygen. Instead, the As-Ga backbonds are...

  • Scanning tunneling microscopy of GaAs multiple pn junctions. Gwo, S.; Smith, A.R. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1104 

    Investigates gallium arsenide multiple pn junctions using scanning tunneling microscopy. Cleavage of samples in ultrahigh vacuum; Observation of direct topographic contrast in the constant current imaging mode; Comparison of topographic heights in varying doped-regions.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics