Low threshold buried heterostructure quantum well diode lasers by laser-assisted disordering

Epler, J. E.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1637
Academic Journal
The first buried heterostructure laser diodes fabricated by laser-assisted disordering, a direct-write process, are described. In laser-assisted disordering a focused laser beam is scanned across the AlGaAs-GaAs heterostructure material to induce local melting and thereby incorporate Si from an encapsulation layer into the regrown crystal. A subsequent thermal anneal (850 °C, 0.7 h) is used to diffuse the Si deeper into the sample to enlarge the disordered region. This combination of patterned crystal regrowth and impurity-induced disordering is used to fabricate quantum well devices with lasing threshold currents as low as 6 mA (pulsed) and 8 mA (continuous). These devices have a narrow 4.5-μm-wide waveguide region and operate with a single longitudinal and spatial mode. They are the first optoelectronic devices fabricated with a direct-write laser-assisted process.


Related Articles

  • Native oxide top- and bottom-confined narrow stripe p-n.... Maranowski, S.A.; Sugg, A.R. // Applied Physics Letters;9/20/1993, Vol. 63 Issue 12, p1660 

    Demonstrates the operation of quantum well heterostructure (QWH) laser diode confined by an insulating, low index native oxide on both sides of the junction. Definition of modified mesa QWH laser; Metallization of wide mesa narrow stripe diode laser; Function of standard photolithographic...

  • Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate-confinement-heterostructure quantum well distributed feedback laser diodes. Takano, Shinji; Sasaki, Tatsuya; Yamada, Hirohito; Kitamura, Mitsuhiro; Mito, Ikuo // Applied Physics Letters;11/21/1988, Vol. 53 Issue 21, p2019 

    Spectral linewidth reduction in 1.5 μm InGaAs/InGaAsP separate-confinement-heterostructure quantum well distributed feedback laser diodes (SCH-QW-DFB LD’s) is achieved for the first time. A 2.0 MHz minimum linewidth and a 5 MHz mW minimum linewidth power product are obtained.

  • On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers. Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Skrynnikov, G. V.; Sokolova, Z. N.; Tarasov, I. S.; Fetisova, N. V. // Semiconductors;Dec2000, Vol. 34 Issue 12, p1397 

    The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 µm was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that...

  • Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells. Volovik, B. V.; Kovsh, A. R.; Passenberg, W.; Kuenzel, H.; Ledentsov, N. N.; Ustinov, V. M. // Technical Physics Letters;May2000, Vol. 26 Issue 5, p443 

    The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the InGaAsN quantum wells is obtained in the...

  • AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers... Wang, C.A.; Walpole, J.N. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2208 

    Studies separate-confinement heterostructure diode lasers containing a strained Al[sub 0.18]In[sub 0.20]Ga[sub 0.62]As single quantum well active layer and Al[sub 0.25]Ga[sub 0.75]As confining layers. Emission wavelength; Threshold current density; Differential quantum efficiency;...

  • Coupled-stripe in-phase operation of planar native-oxide index-guided.... Kish, F.A.; Caracci, S.J. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p71 

    Examines the coupled-stripe in-phase operation of native-oxide quantum well heterostructure (QWH) laser arrays. Fabrication of two different sets of laser-diode arrays; Control of the native oxide layer thickness between emitters; Details on the continuous thresholds and power output of QWH...

  • High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well.... Caracci, S.J.; Kish, F.A. // Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p321 

    Fabricates a high-performance planar buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers by oxidation. Exhibition of continuous laser thresholds with single longitudinal mode operation; Measurement of the external differential quantum efficiencies; Observation of the peak...

  • High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by.... Chand, Naresh; Dutta, N.K.; Chu, S.N.G.; Syrbu, A.V.; Mereutza, A.Z.; Yakovlev, V.P. // Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1818 

    Describes a method for growth and fabrication of high performance strained InGaAs/AlGaAs quantum-well buried-heterostructure lasers. Growth of lasers by molecular beam epitaxy; Display of lower threshold current; Obtainment of a stable fundamental transverse mode operation.

  • InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well heterostructure design for.... Liau, Z.L.; Choi, H.K. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3219 

    Examines the strained-layer InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well (MQW) heterostructure design for laser improvement. Implication of well and barrier compositions for MQW crystal growth; Effect of compressive strain on MQW heterostructure; Relationship between hole...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics