Recrystallization kinetics pattern in III-V implanted semiconductors

Licoppe, C.; Nissim, Y. I.; Meriadec, C.; Hénoc, P.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1648
Academic Journal
Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.


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