Ultrathin gate oxides formed by catalytic oxidation of silicon

Oellig, Eva M.; Michel, E. G.; Asensio, M. C.; Miranda, R.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1660
Academic Journal
A recipe to produce ultrathin gate oxides by K-promoted catalytic oxidation of Si is described. The thickness of the final oxide depends linearly on the amount of K predeposited. The resulting oxide is chemically homogeneous. The process takes place at temperatures much lower than those used in thermal oxidation. The maximum temperature required to desorb the catalyst is 600 °C.


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