TITLE

Surface quantum wells

AUTHOR(S)
Cohen, R. M.; Kitamura, M.; Fang, Z. M.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface quantum wells of InP have been grown, by organometallic vapor phase epitaxy, on top of graded GaxIn1-xP epitaxial layers. The surface quantum well is confined on one side by vacuum, and on the other side by the graded GaxIn1-xP. Photoluminescence measurements show two transitions for electron-hole recombination within the surface quantum well. Surface recombination appears to be saturated by the high density of carriers collected in the well, and plays a minor role. The bending of the conduction and valence bands in the GaxIn1-xP leads to a high collection efficiency of excess carriers near the surface, and suggests that high efficiency surface light emitters could be built in similar structures.
ACCESSION #
9823205

 

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