Gated diode leakage and lifetime measurements of misfit dislocation gettered Si epitaxy

Salih, Ali S. M.; Radzimski, Z.; Honeycutt, J.; Rozgonyi, G. A.; Bean, K. E.; Lindberg, K.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1678
Academic Journal
Gated diode leakage current and minority-carrier lifetime are compared between Si wafers extrinsically gettered with epitaxial misfit dislocations and reference homoepitaxial material. The stability and gettering efficiency of the interfacial misfit dislocations have been verified by measuring leakage currents of less than 1 nA/cm2 for both gate depletion and accumulation for a large number of diodes. In either mode, the gated diodes with misfit dislocation gettering exhibited more than an order of magnitude lower leakage current than that produced by standard epi without misfit dislocations. In addition, minority-carrier generation lifetimes greater than 2 ms were typical of material extrinsically gettered via misfit dislocations, while reference epi was two to three times lower. The lifetme was found to be uniform in the near-surface region, but was drastically reduced in the immediate vicinity of the misfit locations, indicating that the defects may provide useful options in high-speed devices, latch-up control, and radiation hard devices.


Related Articles

  • Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si. Contreras, O.; Ponce, F. A.; Christen, J.; Dadgar, A.; Krost, A. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4712 

    The addition of bursts of silicon has been observed to correlate with the reduction of threading screw dislocations during epitaxial growth of GaN on silicon by metalorganic chemical vapor deposition. The reduction is associated with bending of screw dislocations and "pairing" with equivalent...

  • Material properties of high-quality GaAs epitaxial layers grown on Si substrates. Fischer, R.; Morkoç, H.; Neumann, D. A.; Zabel, H.; Choi, C.; Otsuka, N.; Longerbone, M.; Erickson, L. P. // Journal of Applied Physics;9/1/1986, Vol. 60 Issue 5, p1640 

    Investigates the materials properties of gallium arsenide (GaAs) on silicon (Si) epitaxial layers. Problems associated with the growth of GaAs on Si; Details of the issues of dislocation reduction and suppression of antiphase domains; Techniques used for dislocation control.

  • Low-dimensional structures generated by misfit dislocations in the bulk of.... Shiryaev, S.Yu.; Jensen, F. // Applied Physics Letters;10/6/1997, Vol. 71 Issue 14, p1972 

    Investigates the capability of misfit dislocations in the bulk of silicon[1-x]germanium[sub x]/silicon heteroepitaxial systems. Uses of the crystallographic slip originating from graded Si[sub 1-x]Ge[sub x] layers; Information on alloy composition modulation on a compositionally modulated...

  • Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide. Kukushkin, S.; Osipov, A.; Zhukov, S.; Zavarin, E.; Lundin, W.; Sinitsyn, M.; Rozhavskaya, M.; Tsatsulnikov, A.; Troshkov, S.; Feoktistov, N. // Technical Physics Letters;Mar2012, Vol. 38 Issue 3, p297 

    A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low (<10 cm) density of lattice misfit...

  • Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon. Zaumseil, Peter; Schubert, Markus Andreas; Yuji Yamamoto; Skibitzki, Oliver; Capellini, Giovanni; Schroeder, Thomas // Solid State Phenomena;2016, Vol. 242, p402 

    The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si...

  • Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111). Natali, F.; Semond, F.; Massies, J.; Byrne, D.; Laügt, S.; Tottereau, O.; Vennéguès, P.; Dogheche, E.; Dumont, E. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1386 

    We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using ammonia. The structural properties are assessed by reflection high-energy electron diffraction, atomic force microscopy, transmission electron...

  • Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates. Choi, C.; Otsuka, N.; Munns, G.; Houdre, R.; Morkoç, H.; Zhang, S. L.; Levi, D.; Klein, M. V. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p992 

    Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates were subjected to annealing under As overpressure at 650, 750, and 850 °C for 1/2 h. A substantial reduction in the dislocation density near the interface and in the bulk of the epitaxial layers was observed for...

  • Dislocation effects on carrier concentration for molecular-beam-epitaxially grown GaAs. Shinohara, Masanori; Hyuga, Fumiaki; Watanabe, Kazuo; Imamura, Yoshihiro // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p304 

    Presents a study that investigated the dislocation effects on carrier concentration for silicon (Si)-doped and Si-implanted molecular-beam-epitaxially grown gallium arsenide layers by small area Hall measurements. Absence of correlation of carrier concentration with dislocation density and...

  • Defect Formation in Ge1 – xSix/Ge(111) Epitaxial Heterostructures. Yugova, T. G.; Mil'vidskii, M. G.; Vdovin, V. I. // Physics of the Solid State;Aug2004, Vol. 46 Issue 8, p1520 

    Selective chemical etching and transmission electron microscopy are used to study the defect formation in Ge1 – xSix/Ge(111) epitaxial heterostructures at 0.01 < x < 0.35. As the Si content in the solid solution (SS) increases, the dislocation densities in the epitaxial layer, at the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics