TITLE

Low-temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source

AUTHOR(S)
Kisker, D. W.; Steigerwald, M. L.; Kometani, T. Y.; Jeffers, K. S.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1681
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium-containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II-VI compounds possible at much lower temperatures.
ACCESSION #
9823197

 

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