Low-temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source

Kisker, D. W.; Steigerwald, M. L.; Kometani, T. Y.; Jeffers, K. S.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1681
Academic Journal
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium-containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II-VI compounds possible at much lower temperatures.


Related Articles

  • Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate. Horning, R. D.; Staudenmann, J.-L. // Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1482 

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 °C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the...

  • Influence of tellurium doping on step bunching of GaAs(001) vicinal surfaces grown by organometallic vapor phase epitaxy. Lee, S. H.; Stringfellow, G. B. // Applied Physics Letters;9/21/1998, Vol. 73 Issue 12 

    Atomic force microscopy has been used to investigate the influence of controlled tellurium (Te) incorporation on the step structure of GaAs grown by organometallic vapor phase epitaxy on vicinal (001) surfaces. Te doping, using the precursor diethyltelluride, is found to markedly decrease the...

  • Photochemical organometallic vapor phase epitaxy of mercury cadmium telluride. Morris, B. J. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p867 

    Mercury cadmium telluride has been successfully grown by the photolysis of dimethylmercury, dimethylcadmium, and dimethyltelluride, using an ArF excimer laser operating at 193 nm as the radiation source. Growths were accomplished on CdTe substrates at a temperature of 150 °C, with a growth...

  • Arsenic-doped p-CdTe layers grown by organometallic vapor phase epitaxy. Ghandhi, S. K.; Taskar, N. R.; Bhat, I. B. // Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p900 

    Arsenic-doped CdTe layers have been grown by organometallic vapor phase epitaxy in an atmospheric pressure reactor using arsine as the dopant gas. Doping levels above 2×1017 cm-3 have been reproducibly obtained for the first time in an epitaxial growth system, with a doping uniformity of...

  • Photoconductive Hg1-xCdxTe detectors grown by low-temperature metalorganic chemical vapor deposition. Bethea, C. G.; Levine, B. F.; Lu, P.-Y.; Williams, L. M.; Ross, M. H. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1629 

    We have fabricated high-sensitivity Hg1-xCdxTe detectors from low-temperature metalorganic vapor deposition samples. Responsivities of R=2000 V/W and detectivities of D*=2×1010 cm Hz1/2/W have been achieved.

  • Extrinsic p-type doping of HgCdTe grown by organometallic epitaxy. Ghandhi, S. K.; Taskar, N. R.; Parat, K. K.; Terry, D.; Bhat, I. B. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1641 

    In this letter, we report on the extrinsic p-type doping of mercury cadmium telluride (MCT), during growth by organometallic vapor phase epitaxy. Arsine gas in hydrogen was used as the dopant source. The layers were characterized by Hall effect and by resistivity measurements over the...

  • Effect of pulsed laser irradiation on the structure of GeTe films deposited by metal organic chemical vapor deposition: A Raman spectroscopy study. Salicio, O.; Wiemer, C.; Fanciulli, M.; Gawelda, W.; Siegel, J.; Afonso, C. N.; Plausinaitiene, V.; Abrutis, A. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Phase changes between amorphous and crystallized states were induced by laser irradiation with nanosecond pulses in GexTey films grown by metal organic chemical vapor deposition. The different phases were obtained by adjusting the pulse energy and could be distinguished by their different...

  • Laplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb. Venter, A.; Botha, J. R.; Wagener, V.; Murape, D. M. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 2, p024505 

    Three prominent electron traps, 0.167 eV, 0.243 eV, and 0.295 eV below the conduction band minimum were detected in Te doped MOCVD grown n-GaSb using an Au Schottky barrier diode. The free carrier concentration of the ∼3 μm epilayer grown on n+ (>1018 cm-3) substrate, confirmed by Hall...

  • Excitons in heteroepitaxial CdSe/CdS structures. Fedorov, D. L.; Denisov, E. P.; Tenishev, L. N.; Chernyshov, M. B.; Kuznetsov, P. I.; Yakushcheva, G. G. // Physics of the Solid State;May98, Vol. 40 Issue 5, p816 

    X-ray diffractometry and low-temperature exciton spectroscopy are used to study heteroepitaxial CdSe/CdS layers grown at temperatures of 350-485 °C by MOCVD. The high-temperature samples are found to display the exciton and x-ray diffraction spectra characteristic of hexagonal Wurtzite (W)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics