TITLE

Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition

AUTHOR(S)
Shigeta, Mitsuhiro; Nakanishi, Kenji; Fujii, Yoshihisa; Furukawa, Katsuki; Hatano, Akitsugu; Uemoto, Atsuko; Suzuki, Akira; Nakajima, Shigeo
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1684
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of β-SiC on Si(511) substrates has been carried out. Single-crystalline β-SiC films without warpage and cracking are grown by chemical vapor deposition. The epitaxial orientation of the film is determined using x-ray precession camera. The orientation is inclined as SiC(411)//Si(511) coincident with the [011] axis, which should be compared with the parallel epitaxial growth on Si(100) or Si(111).
ACCESSION #
9823193

 

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