GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy

Mitsunaga, K.; Noda, S.; Kojima, K.; Kameya, M.; Kyuma, K.; Hamanaka, K.; Nakayama, T.
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1622
Academic Journal
GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 °C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.


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