Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperature

Horikoshi, Yoshiji; Kawashima, Minoru; Yamaguchi, Hiroshi
June 1987
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1686
Academic Journal
When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free or a very low As pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic is exploited for growing high-quality GaAs and AlGaAs layers at very low temperatures by alternately supplying Ga and/or Al atoms and As4 molecules to the GaAs substrate. Applying this method, AlGaAs-GaAs single quantum well structures with excellent photoluminescence characteristics are grown at 300 °C.


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