TITLE

Evidence of strong Auger recombination in semiconductor-doped glasses

AUTHOR(S)
de Rougemont, F.; Frey, R.; Roussignol, P.; Ricard, D.; Flytzanis, C.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1619
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intracavity nearly degenerate four-wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electron-hole pairs in semiconductor-doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold.
ACCESSION #
9823164

 

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