TITLE

New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature

AUTHOR(S)
Robbins, D. J.; Young, I. M.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1575
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rate of silicon homoepitaxy from SiH4/H2 mixtures has been studied between 750 and 850 °C using a new ultrahigh-vacuum-compatible low pressure reactor. The analysis of the experimental data is novel in including the effects of both nonepitaxial deposition within the reactor and of gas pumping speed. Epitaxy by pyrolysis of SiH4/H2 mixtures on clean Si substrates between 800 and 850 °C is first order in SiH4 pressure but zero order in H2 pressure at least to 1 mm Hg. The results do not support models of growth mechanism derived from previous studies.
ACCESSION #
9823137

 

Related Articles

  • Isotope-Pure [sup 28]Si Layers Grown by VPE. Godisov, O. N.; Kaliteevsky, A. K.; Safronov, A. Yu.; Korolev, V. I.; Aruev, P. N.; Ber, B. Ya.; Davydov, V. Yu.; Zabrodskaya, N. V.; Zabrodsky, V. V.; Kaliteevsky, M. A.; Kop’ev, P. S.; Kovarsky, A. P.; Sukhanov, V. L. // Semiconductors;Dec2002, Vol. 36 Issue 12, p1398 

    Vapor-phase epitaxy was used to grow Si layers enriched to 99.96% with [sup 28]Si isotope. Secondaryion mass spectrometry and Raman spectroscopy were used to demonstrate the high quality of the epitaxial material obtained.

  • Erbium-doped silicon epilayers grown by liquid-phase epitaxy. Binetti, S.; Pizzini, S.; Cavallini, A.; Fraboni, B. // Semiconductors;Jun99, Vol. 33 Issue 6, p596 

    A careful analysis of the features of the spectroscopic properties of Er-doped and undoped epitaxial silicon films grown by liquid-phase epitaxy at 950 °C in silicon-saturated indium melts shows that threading dislocations work as effective gettering sites for erbium and oxygen. The last...

  • Dichlorosilane effects on low-temperature selective silicon epitaxy. Jen-Chung Lou; Galewski, Carl; Oldham, William G. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p59 

    Studies low-temperature selective silicon epitaxial growth using a dichlorosilane-hydrogen mixture in a low-pressure chemical vapor deposition hot-wall reactor. Removal of surface oxides by HF vapor treatment; Passivation of the Si surface prior to reactor loading.

  • Step dynamics on vicinal Si(001) during epitaxial growth. Myers-Beaghton, Andrea K.; Vvedensky, Dimitri D. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p2013 

    Examines the steps dynamics on vicinal Si(001) during epitaxial growth. Description of the adatom migration and attachment kinetics of vicinal Si(001) surfaces; Evaluation of the transient and steady-state terrace widths during growth; Significance of island formation in balancing the different...

  • Explanation of the limiting thickness observed in low-temperature silicon epitaxy. Thiesen, Jack; Branz, Howard M.; Crandall, Richard S. // Applied Physics Letters;11/27/2000, Vol. 77 Issue 22 

    Solution of the partial differential equation for diffusion of mobile atoms during solid film growth demonstrates that the observed phase transition in low-temperature silicon epitaxy is triggered by supersaturation of the growing layer with hydrogen. The limiting thickness of the epitaxial...

  • Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO[sub 2]/Si[sub 3]Ni[sub 4] mask patterned by an atomic force microscope. Yasuda, T.; Yamasaki, S.; Gwo, S. // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    We report selective epitaxial growth of Si using an ultrathin bilayer mask. The key feature of this process is direct writing of nanoscale patterns by means of local anodic oxidation of a Si[sub 3]N[sub 4] layer using an atomic force microscope operated in air. Windows for selective growth are...

  • Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation. Schroeder, T. W.; Ma, P. F.; Lam, A. M.; Zheng, Y.-J.; Engstrom, J. R. // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2181 

    We present here a low-temperature (T[sub s]<630 °C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant...

  • Localized epitaxial growth of C54 and C49 TiSi2 on (111)Si. Fung, M. S.; Cheng, H. C.; Chen, L. J. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1312 

    Both C54 and C49 structure TiSi[sub 2] were found to grow epitaxially on (111)Si. Epitaxial regions, as large as 15 µm in size, were observed. The orientation relationships between epitaxial C54-TiSi[sub 2] and Si were determined to be [100]TiSi[sub 2]//[111]Si, (004)TiSi[sub...

  • Comparison of crystal orientation dependence for the solid phase epitaxial process in ion implanted Si and GaAs. Licoppe, C.; Nissim, Y. I.; Henoc, P. // Applied Physics Letters;5/26/1986, Vol. 48 Issue 21, p1441 

    Solid phase epitaxial (SPE) regrowth is studied using the time-resolved reflectivity technique in ion implanted semiconductors with different substrate orientations. In silicon evidence for a planar (100) growth front and a roughening (111) growth front is given. In GaAs the crystal/amorphous...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics