TITLE

Activation efficiency improvement in Si-implanted GaAs by P co-implantation

AUTHOR(S)
Hyuga, Fumiaki; Yamazaki, Hajime; Watanabe, Kazuo; Osaka, Jiro
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1592
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Co-implantation effects of N, P, and As are studied for Si-implanted GaAs by the Hall effect and photoluminescence measurements. The P co-implantation enhances and homogenizes the activation efficiency of the implanted Si, and decreases photoluminescence peak intensities of the SiAs and the GaAs acceptors. It also suppresses the variation of the Si activation efficiency among the crystal ingots by half. These results indicate that P co-implantation is a promising method for fabricating active layers of high-performance GaAs large scale integrated circuits.
ACCESSION #
9823132

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics