TITLE

Stable, self-aligned TiNxOy/TiSi2 contact formation for submicron device applications

AUTHOR(S)
Ku, Y. H.; Louis, E.; Shih, D. K.; Lee, S. K.; Kwong, D. L.; Alvi, N. S.
PUB. DATE
June 1987
SOURCE
Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1598
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 has been studied. The chemical stability in dilute HF and the effectiveness of TiNxOy on TiSi2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good chemical stability in dilute HF at least for 60 s and Al/TiNxOy/TiSi2/Si is thermally stable up to 500 °C for 30 min sintering.
ACCESSION #
9823128

 

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