Determination of the band-edge offset in heterojunctions by electron beam induced current (GaAs/GaAlAs)

Eisenbeiss, A.; Heinrich, H.; Opschoor, J.; Tijburg, R. P.; Preier, H.
June 1987
Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1583
Academic Journal
The electron beam induced current generated at a GaAs/Ga0.48Al0.52As heterojunction was investigated as a function of externally applied bias. In the absence of interface charge the flatband voltage was determined and the band-edge offset evaluated. For the valence-band-edge offset 5.5 meV/% Al was obtained.


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