Fluorine in low-pressure chemical vapor deposited W/Si contact structures: Inclusion and thermal stability

Whitlow, H. J.; Eriksson, Th.; Östling, M.; Petersson, C. S.; Keinonen, J.; Anttila, A.
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1497
Academic Journal
Concentration distributions of fluorine in low-pressure chemical vapor deposited W/(100)Si structures have been studied by the nuclear resonance broadening technique through the reaction 19F( p,αγ)16O. In unannealed structures the total fluorine content (4.8×1015 at. cm-2) was chiefly concentrated around the W/Si interface. No loss or redistribution of fluorine was observed on annealing at a temperature of 600 °C or below where no silicide formation took place. About 20% reduction of the fluorine content was observed after annealing at 700 °C and above where WSi2 formation occurred. No evidence of fluorine diffusion into the silicon substrate was seen for annealing up to 900 °C for 1 h.


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