Metastable thermal donor states in silicon

Chantre, Alain
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1500
Academic Journal
Deep level transient spectroscopy has been applied to the study of defects introduced in silicon by short heat treatments at 450 °C. The behavior of an electron trap at Ec-0.15 eV is shown to provide strong evidence for the bistable nature of small thermal donor clusters.


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