InGaP/InP waveguides

Joyner, C. H.; Dentai, A. G.; Alferness, R. C.; Buhl, L. L.; Divino, M. D.; Dautremont-Smith, W. C.
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1509
Academic Journal
We have made InGaP/InP waveguides on InP substrates by atmospheric pressure metalorganic vapor phase epitaxy. The introduction of Ga in the cladding layers causes a large relative index change (Δn=0 to >0.18) that can be varied with the Ga concentration (Δn=0.18 with Ga at 5×1019 cm-3), creating strong, low loss (∼1.25 dB/cm) waveguides. In addition some of these structures were doped with Fe, using ferrocene as the Fe doping source. Typical resistivities of 107 Ω cm have been achieved at Fe concentrations of 5×1017 cm-3, allowing electric fields in excess of 10 000 V/cm to be applied to the waveguides. InGaP/InP Fe-doped waveguides should prove extremely useful in fabricating switches, modulators, couplers, and filters for integrated optics devices.


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