Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures

Kikkawa, T.; Watanabe, H.; Murata, T.
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1527
Academic Journal
Blisters and voids in aluminum plasma enhanced chemical vapor deposited silicon nitride layered structures are studied. Results from evolved gas analysis have indicated release of hydrogen. Hydrogen evolution from silicon/nitride/aluminum/phosphosilicate glass/silicon layered structure showed a sharp peak in the temperature range between 580 and 660 °C. The results indicated that the accumulation of high pressure hydrogen gas evolved from the silicon nitride film and trapped at the aluminum silicon nitride interface could be the most dominant mechanism of the blister and void formation.


Related Articles

  • Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance... Pool, F.S. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2839 

    Studies the relation of nitrogen and silane nitrogen plasmas to the growth of silicon nitride as a function of pressure. Electron cyclotron resonance microwave plasma-enhanced chemical vapor deposition (ECR PECVD) system; Characterization of the silicon nitride; Plasma characterization; Plasma...

  • Hydrogen ionic plasma generated using Al plasma grid. Oohara, W.; Anegawa, N.; Egawa, M.; Kawata, K.; Kamikawa, T. // Physics of Plasmas;Aug2016, Vol. 23 Issue 8, p1 

    Negative hydrogen ions are produced in the apertures of a plasma grid made of aluminum under the irradiation of positive ions, generating an ionic plasma consisting of positive and negative ions. The saturation current ratio obtained using a Langmuir probe reflects the existence ratio of...

  • Fluorinated chemistry for high-quality, low hydrogen plasma-deposited silicon nitride films. Chang, Chorng-Ping; Flamm, Daniel L.; Ibbotson, Dale E.; Mucha, John A. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1406 

    Develops a low-temperature plasma deposition process to prepare novel fluorine-containing silicon nitride films using discharge mixtures at a certain applied frequency. Mechanism for the novel discharge chemistry; Significance of silicon nitride in integrated circuit technology; Description of...

  • Photodetachment technique for measuring H- velocities in a hydrogen plasma. Devynck, P.; Auvray, J.; Bacal, M.; Berlemont, P.; Bruneteau, J.; Leroy, R.; Stern, R. A. // Review of Scientific Instruments;Sep89, Vol. 60 Issue 9, p2873 

    This article reports work in progress on laser diagnostics of negative-ion transport velocity in H[sup -]ion volume sources. The plasma dynamics after the laser shot is discussed in detail, and the effect of the potential perturbation on the H[sup -] velocities is evaluated. A method of...

  • Radiative and diffusional effects to the population densities of the excited-state atoms in hydrogen plasma. Cho, K. Y.; Eddy, T. L. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1524 

    Collisional-radiative (C-R) calculations based on the generalized multithermal equilibrium (GMTE) model are used to find the effects of radiative transfer and diffusion on excited-state populations in a hydrogen plasma. Radiation absorption factors are introduced to study the nonlocal aspects of...

  • Spectroscopic measurements of hydrogen ion temperature during divertor recombination. Stotler, D.P.; Skinner, C.H.; Karney, C.F.F. // Review of Scientific Instruments;Jan1999, Vol. 70 Issue 1, p347 

    Explores the possibility of using the neutral hydrogen[sub alpha] spectral line profile to measure the ion temperature in a recombining plasma. Insignificance of interference from nonrecombining regions contributing to the chord integrated data; Simulation of a Doppler and Stark broadened H[sub...

  • Plasma beam deposited amorphous hydrogenated carbon: Improved film quality at higher growth rate. Gielen, J. W. A. M.; van de Sanden, M. C. M.; Schram, D. C. // Applied Physics Letters;7/8/1996, Vol. 69 Issue 2, p152 

    High quality diamondlike a-C:H has been deposited, at low ion bombardment energies, from an expanding thermal argon/acetylene plasma at high growth rate. It is observed that quality improvement, in terms of hardness, is equivalent to maximization of the refractive index. The highest refractive...

  • Analysis of high-energy plasma formation in hydrogen. Walsh, Peter J.; Degnan, J. H. // Journal of Applied Physics;12/1/1991, Vol. 70 Issue 11, p6718 

    Presents a study that analyzed the formation of high energy plasma in hydrogen. Methodology; Calculation of the velocity and acceleration of the plasma; Determination of the size and shape of the plasma.

  • Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon. Simoen, E.; Claeys, C.; Job, R.; Ulyashin, A. G.; Fahrner, W. R.; De Gryse, O.; Clauws, P. // Applied Physics Letters;9/2/2002, Vol. 81 Issue 10, p1842 

    The impact of plasma hydrogenation on the subsequent formation of thermal donors at 450 °C in n-type oxygen-doped high-resistivity float-zone silicon is investigated by a combination of electrical and spectroscopic techniques. It is shown that the increase of the doping concentration can be...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics