TITLE

Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures

AUTHOR(S)
Kikkawa, T.; Watanabe, H.; Murata, T.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1527
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Blisters and voids in aluminum plasma enhanced chemical vapor deposited silicon nitride layered structures are studied. Results from evolved gas analysis have indicated release of hydrogen. Hydrogen evolution from silicon/nitride/aluminum/phosphosilicate glass/silicon layered structure showed a sharp peak in the temperature range between 580 and 660 °C. The results indicated that the accumulation of high pressure hydrogen gas evolved from the silicon nitride film and trapped at the aluminum silicon nitride interface could be the most dominant mechanism of the blister and void formation.
ACCESSION #
9823056

 

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