Effects of hydrogen ion implantation on Al/Si Schottky diodes

Yapsir, A. S.; Hadizad, P.; Lu, T.-M.; Corelli, J. C.; Lanford, W. A.; Bakhru, H.
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1530
Academic Journal
Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of the hydrogen distribution was localized at the metal-semiconductor interface. Current-voltage (I-V) measurements indicated more ohmic behavior in the Al/Si(n) and more rectifying behavior in the Al/Si(p) diodes. For both cases, annealing at 200 °C for 30 min caused the I-V curves to almost revert to the pre-implantation characteristics. A similar behavior was observed using the capacitance-voltage (C-V) measurement technique. No significant change of the hydrogen concentration or redistribution of the concentration was observed after the 200 °C heat treatment. Correlation between the hydrogen depth profiling data and the electrical measurements indicated that, as far as I-V and C-V were concerned, the implanted hydrogens were electrically inactive.


Related Articles

  • Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract). Jonker, B.T.; Kneedler, E.M. // Journal of Applied Physics;4/16/1997, Vol. 81 Issue 8, p4362 

    Presents an abstract of a study on the Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure. Use of photoreflectance spectroscopy to measure Schottky barrier height formed for Fe films.

  • Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers. Kalinina, E.V.; Kholuyanov, G.F.; Davydov, D.V.; Strel'chuk, A.M.; Hallen, A.; Konstantinov, A.O.; Luchinin, V.V.; Nikiforov, A. Yu. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1229 

    The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p[sup +]–n–n[sup +] diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing...

  • Low-energy hydrogen ion implantation in Schottky barrier control. Singh, R.; Ashok, S. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p426 

    The use of a shallow dopant implant at the semiconductor surface is a welt entrenched technique for Schottky barrier height modification. The essential thermal annealing step following implantation has the undesirable effect of redistributing the dopant atoms and thus reducing the efficacy of...

  • Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers. Yamada, Masao; Greene, Albert M.; Herrera-Gomez, Alberto; Kendelewicz, Ton; Spicer, William E. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3121 

    Examines the thermal stability of Schottky barriers at gold and silver/indium phosphide(110) interfaces. Use of photoemission spectroscopy; Observation of strong clustering; Change in Fermi level positions.

  • Effect of growth conditions on the electrical and optical properties of.... Brown, A.S.; Henige, J.A.; Schmitz, A.E.; Larson, L.E. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p66 

    Examines the effect of growth conditions on the electrical and optical properties of Al[sub x]In[sub 1-x]As-Ga[sub 0.47]In[sub 0.53]As heterostructures. Observation on the optimum growth temperature regime for the aluminum-rich Schottky layers; Display of highest conductivity; Exhibition of...

  • Current-voltage characteristics and interface state density of GaAs Schottky barrier. Maeda, Keiji; Ikoma, Hideaki; Sato, Kenji; Ishida, Toshiki // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2560 

    Examines the density distribution of interface states in GaAs Schottky barrier from nonideal I-V characteristics by the interfacial layer model. Increase of the ideality factor with increasing forward bias voltage; Observation of the fermi level of interface states shifts; Magnitude of the...

  • Schottky enhancement of reacted NiAl/n-GaAs contacts. Chen, C.-P.; Chang, Y.A. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3485 

    Demonstrates the Schottky enhancement of reacted NiAl/n-GaAs contacts. Increase of the Schottky barrier height for the as-deposited contacts; Rationalization of the formation of a high aluminum (Al) content (aluminum,gallium)arsenic layer at the interface upon annealing; Microscopy used to show...

  • Comment on 'Current-voltage characteristics and interface state density of GaAs Schottky.... Horvath, Zs.J. // Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p511 

    Presents a method for extracting the interface state energy distribution spectrum from the current-voltage characteristics of Schottky barrier diodes. Development of the method by several researchers; Assessment of the analysis; Opinion of the deduction of researchers.

  • Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces. Weitering, H. H.; Sullivan, J. P.; Carolissen, R. J.; Pérez-Sandoz, R.; Graham, W. R.; Tung, R. T. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7820 

    Presents information on a study which investigated inhomogeneous Schottky barriers at silver/silicon (111) and (100) interfaces. Experimental procedure; Results; Discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics