TITLE

Effects of hydrogen ion implantation on Al/Si Schottky diodes

AUTHOR(S)
Yapsir, A. S.; Hadizad, P.; Lu, T.-M.; Corelli, J. C.; Lanford, W. A.; Bakhru, H.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1530
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al/Si(p) and Al/Si(n) Schottky diodes were implanted with hydrogen ions such that the peak of the hydrogen distribution was localized at the metal-semiconductor interface. Current-voltage (I-V) measurements indicated more ohmic behavior in the Al/Si(n) and more rectifying behavior in the Al/Si(p) diodes. For both cases, annealing at 200 °C for 30 min caused the I-V curves to almost revert to the pre-implantation characteristics. A similar behavior was observed using the capacitance-voltage (C-V) measurement technique. No significant change of the hydrogen concentration or redistribution of the concentration was observed after the 200 °C heat treatment. Correlation between the hydrogen depth profiling data and the electrical measurements indicated that, as far as I-V and C-V were concerned, the implanted hydrogens were electrically inactive.
ACCESSION #
9823053

 

Related Articles

  • Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure (abstract). Jonker, B.T.; Kneedler, E.M. // Journal of Applied Physics;4/16/1997, Vol. 81 Issue 8, p4362 

    Presents an abstract of a study on the Schottky barrier formation for Fe on GaAs(001) and the role of interfacial structure. Use of photoreflectance spectroscopy to measure Schottky barrier height formed for Fe films.

  • Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers. Kalinina, E.V.; Kholuyanov, G.F.; Davydov, D.V.; Strel'chuk, A.M.; Hallen, A.; Konstantinov, A.O.; Luchinin, V.V.; Nikiforov, A. Yu. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1229 

    The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p[sup +]–n–n[sup +] diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing...

  • Low-energy hydrogen ion implantation in Schottky barrier control. Singh, R.; Ashok, S. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p426 

    The use of a shallow dopant implant at the semiconductor surface is a welt entrenched technique for Schottky barrier height modification. The essential thermal annealing step following implantation has the undesirable effect of redistributing the dopant atoms and thus reducing the efficacy of...

  • Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers. Yamada, Masao; Greene, Albert M.; Herrera-Gomez, Alberto; Kendelewicz, Ton; Spicer, William E. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3121 

    Examines the thermal stability of Schottky barriers at gold and silver/indium phosphide(110) interfaces. Use of photoemission spectroscopy; Observation of strong clustering; Change in Fermi level positions.

  • Effect of growth conditions on the electrical and optical properties of.... Brown, A.S.; Henige, J.A.; Schmitz, A.E.; Larson, L.E. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p66 

    Examines the effect of growth conditions on the electrical and optical properties of Al[sub x]In[sub 1-x]As-Ga[sub 0.47]In[sub 0.53]As heterostructures. Observation on the optimum growth temperature regime for the aluminum-rich Schottky layers; Display of highest conductivity; Exhibition of...

  • Current-voltage characteristics and interface state density of GaAs Schottky barrier. Maeda, Keiji; Ikoma, Hideaki; Sato, Kenji; Ishida, Toshiki // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2560 

    Examines the density distribution of interface states in GaAs Schottky barrier from nonideal I-V characteristics by the interfacial layer model. Increase of the ideality factor with increasing forward bias voltage; Observation of the fermi level of interface states shifts; Magnitude of the...

  • Schottky enhancement of reacted NiAl/n-GaAs contacts. Chen, C.-P.; Chang, Y.A. // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3485 

    Demonstrates the Schottky enhancement of reacted NiAl/n-GaAs contacts. Increase of the Schottky barrier height for the as-deposited contacts; Rationalization of the formation of a high aluminum (Al) content (aluminum,gallium)arsenic layer at the interface upon annealing; Microscopy used to show...

  • Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces. Weitering, H. H.; Sullivan, J. P.; Carolissen, R. J.; Pérez-Sandoz, R.; Graham, W. R.; Tung, R. T. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7820 

    Presents information on a study which investigated inhomogeneous Schottky barriers at silver/silicon (111) and (100) interfaces. Experimental procedure; Results; Discussion.

  • Analysis of reverse current--voltage characteristics of Ti/6H--SiC Schottky diodes. Schroder, Chr.; Heiland, W. // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1957 

    Investigates the electrical properties of titanium 6hydrogen (H)-silicon carbide (SiC) Schottky contacts by current-voltage (I-V) measurements. Effect of high leakage currents on SiC Schottky diodes; Interpretation of the reverse I-V characteristics; Inhomogeneity of the interfacial layer with...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics