TITLE

Comment on ‘‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’’ [Appl. Phys. Lett. 49, 450 (1986)]

AUTHOR(S)
Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1533
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on the article by Suzuki et al titled 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition.' Apparent differences in analyses of cubic SiC films; Question about the assertion that donors in the undoped samples are not nitrogen.
ACCESSION #
9823050

 

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