TITLE

Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]

AUTHOR(S)
Suzuki, Akira; Uemoto, Atsuko; Shigeta, Mitsuhiro; Furukawa, Katsuki; Nakajima, Shigeo
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1534
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Replies to a comment by Segall et al on the article 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SlC single crystals grown by chemical vapor deposition.' Agreement with the commenters' choice of 0.346 as a reasonable value for the density-of-state effective mass for a single-band minimum; Opposition to the suggestion that donors in non-doped films are nitrogen.
ACCESSION #
9823047

 

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