Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]

Suzuki, Akira; Uemoto, Atsuko; Shigeta, Mitsuhiro; Furukawa, Katsuki; Nakajima, Shigeo
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1534
Academic Journal
Replies to a comment by Segall et al on the article 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SlC single crystals grown by chemical vapor deposition.' Agreement with the commenters' choice of 0.346 as a reasonable value for the density-of-state effective mass for a single-band minimum; Opposition to the suggestion that donors in non-doped films are nitrogen.


Related Articles

  • Comment on ‘‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’’ [Appl. Phys. Lett. 49, 450 (1986)]. Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G. // Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1533 

    Comments on the article by Suzuki et al titled 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition.' Apparent differences in analyses of cubic SiC films; Question about the assertion that donors in the...

  • Origin of the split Si–H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation. Sieber, N.; Stark, T.; Seyller, Th.; Ley, L.; Zorman, C. A.; Mehregany, M. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4726 

    Using Fourier-transform infrared absorption spectroscopy, we have studied the Si-H stretch mode on hydrogenated 6H-SiC(0001) and 3C-SiC(111). On 6H-SiC(0001) two signals at 2133.5 and 2128.0 cm[sup -1] are observed. Their intensity ratio varies with sample preparation temperature. On 3C-SiC(111)...

  • A 4.5 kV 6H silicon carbide rectifier. Kordina, O.; Bergman, J.P. // Applied Physics Letters;9/11/1995, Vol. 67 Issue 11, p1561 

    Evaluates the growth of silicon carbide having high reverse blocking voltage. Usage of chemical vapor deposition for the growth of epitaxial structure; Impact of temperature on morphology; Effect of voltage simulations on voltage drop.

  • Room-temperature photoluminescence of doped 4H-SiC film grown on AlN/Si(100). Han, T.-T.; Fu, Y.; Ågren, H.; Han, P.; Qin, Z.; Zhang, R. // Applied Physics A: Materials Science & Processing;Jan2007, Vol. 86 Issue 1, p145 

    Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150 °C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37...

  • Metal solvent droplet stability in silicon whisker growth. Nebol'sin, V.; Suyatin, D.; Zotova, E.; Shmakova, S. // Inorganic Materials;Sep2012, Vol. 48 Issue 9, p861 

    We have studied conditions that determine a stable state of the metal solvent droplet in whisker growth through chemical vapor deposition. The results demonstrate that the contact angle of an equilibrium droplet depends on the supersaturation of the vapor phase with the crystallizing substance....

  • A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers. Brunt, Edward; Agarwal, Anant; Burk, Al; Cheng, Lin; O'Loughlin, Michael; Palmour, John; Suvorov, Alexander // Journal of Electronic Materials;Apr2014, Vol. 43 Issue 4, p809 

    This work compares the optical microwave photoconductivity decay (μPCD) and electrical open-circuit voltage decay (OCVD) techniques for measuring the ambipolar carrier lifetime in 4H-silicon carbide (4H-SiC) epitaxial layers. Lifetime measurements were carried out by fabricating P/intrinsic/N...

  • Effect of vapor phase composition on the properties of CVD 3 C-SiC. Ivanova, L.; Demakov, K.; Shakhov, M. // Inorganic Materials;Apr2011, Vol. 47 Issue 4, p369 

    We have studied the effect of silicon-enriched vapor phase composition, deposition temperature, and CHSiCl precursor concentration on the microstructure, resistivity, and compressive strength of 3 C-SiC layers and optimized the conditions for the growth of polycrystalline 3 C-SiC layers...

  • Epitaxial Growth of SiC Epilayers for 10kV Schottky Diodes using Chloride-based CVD. Yun Li; Zhifei Zhao; Zhonghui Li // Advanced Materials Research;2014, Issue 887-888, p462 

    A 100µm silicon carbide epilayer with mean doping concentration 6×1014 cm-3 was achieved on 3 inch silicon carbide substrate using a growh rate of 30 µm/h. Hydrogen gas foil rotation was adopted to improve the doping uniformity. The intra-wafer thickness and doping uniformity was 1.83%...

  • CVD silicon carbide electric heaters. Ivanova, L.; Demakov, K.; Shakhov, M.; Prokhorov, Yu. // Inorganic Materials;Jun2012, Vol. 48 Issue 6, p588 

    This paper describes the growth of tubular polycrystalline 3 C-SiC samples by chemical vapor deposition (CVD). The use of propionitrile as a precursor for nitrogen doping ensures the growth of polycrystalline 3 C-SiC layers with a 1000°C resistivity of 0.1-0.2 Ω cm and zero temperature...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics