Dependence of resonant tunneling current on Al mole fractions in AlxGa1-xAs-GaAs-AlxGa1-xAs double barrier structures

Tsuchiya, Masahiro; Sakaki, Hiroyuki
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1503
Academic Journal
Electron transport in AlxGa1-xAs-GaAs-AlxGa1-xAs double barrier tunneling structures is studied as a function of Al content x in the barrier for the case where the thickness of the barrier is 11 atomic layers and that of the GaAs well layer is 7 nm. It is shown that the density JRT of resonant tunneling current varies systematically from 7.0×102 to 3.5×104 A cm-2 as x is varied from 1.0 to 0.43. These data are found to be quantitatively explained by the theoretical calculation, in which the band discontinuity at Γ valley is taken as the barrier height. This result indicates that the electron tunneling through the double barrier structure is dominated by the barrier height of Γ minimum even when the subsidiary minima have lower energies (0.45≤x≤1.0).


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