High power with high efficiency in a narrow single-lobed beam from a diode laser array in an external cavity

Chang-Hasnain, C. J.; Berger, J.; Scifres, D. R.; Streifer, W.; Whinnery, J. R.; Dienes, A.
May 1987
Applied Physics Letters;5/25/1987, Vol. 50 Issue 21, p1465
Academic Journal
High output power (700 mW) in a nearly diffraction-limited (0.7°) single-lobed nonsteering output beam is obtained from a gain-guided diode laser array in a novel, easily fabricated external cavity configuration. The laser output beam is collimated in both lateral and vertical directions. Differential quantum efficiency as high as 70% has been measured along with excellent linearity of the optical power versus current characteristic. The power and efficiency are the highest reported for a coupled-stripe laser array emitting a narrow single-lobed beam.


Related Articles

  • Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes. Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J. // Applied Physics Letters;9/11/2000, Vol. 77 Issue 11 

    Strained single- and triple-quantum-well (SQW and TQW), large optical cavity GaInAsSb/AlGaAsSb/GaSb laser diodes emitting at 2.26 μm are investigated. Internal loss coefficients as low as 5 and 7.7 cm[sup -1] for the SQW and TQW, respectively, and relatively high internal quantum efficiencies...

  • High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers. Beffa, Federico; Ja¨ckel, Heinz; Achtenhagen, Martin; Harder, Christoph; Erni, Daniel // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    The optical modal gain of ridge-waveguide single-quantum-well InGaAs/AlGaAs diode lasers with an emission wavelength of 980 nm were measured up to a temperature of 250 °C. Comparisons of the obtained gain curves with a simple semiclassical model based on the single-band envelope function...

  • High-power conversion efficiency quantum well diode lasers. Waters, R. G.; Wagner, D. K.; Hill, D. S.; Tihanyi, P. L.; Vollmer, B. J. // Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1318 

    cw power conversion efficiencies of 57% have been obtained on uncoated diode lasers emitting nearly 300 mW per facet. This performance is achieved by using a low-resistance graded index separate confinement single quantum well AlGaAs/GaAs structure with high (84%) differential quantum efficiency...

  • 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 microm. Choi, H.K.; Turner, G.W. // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p2936 

    Examines the continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers. Growth of lasers on indium arsenide substrates by molecular beam epitaxy; Determination of the emission wavelengths of the lasers; Exhibition of pulsed threshold current density.

  • 4 W quasi-continuous-wave output power from 2 microm AlGaAsSb/InGaAsSb single-quantum-well.... Garbuzov, D.Z.; Martinelli, R.U. // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2931 

    Examines fabricated aluminum gallium arsenic/indium gallium antimony single-quantum-well (SWQ) laser diodes emitting at 2 microm. Exhibition of cavity lengths by uncoated SQW lasers; Factors contributing to the deterioration of SQW laser diodes performance; Analysis on maximum differential...

  • Gain characteristics of InGaN/GaN quantum well diode lasers. Song, Y.-K.; Kuball, M.; Nurmikko, A. V.; Bulman, G. E.; Doverspike, K.; Sheppard, S. T.; Weeks, T. W.; Leonard, M.; Kong, H. S.; Dieringer, H.; Edmond, J. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom...

  • The dual wavelength Bi-vertical cavity surface-emitting laser. Carlin, J. F.; Stanley, R. P. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p908 

    Presents a monolithically integrated vertical coupled cavity surface-emitting laser diode which exhibits stable laser emission at two design wavelengths simultaneously. Action of the laser emission as a optical pump for the quantum wells in the longer cavity; Maintenance of a stable emission at...

  • Threshold currents of 1.55...m InGaAs/InGaAsP multiple quantum well laser diodes. Kakimoto, Syoichi; Takagi, Kazuhisa; Watanabe, Hitoshi; Higuchi, Hideo // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p1820 

    Presents information relating to the experimental and theoretical investigation of threshold currents of 1.55 ...m InGaAs/InGaAsP multiple quantum well (MQW) with distributed feedback (DFB) laser diodes (LDs). Consistency of the LDs; Reference to the changing of barrier composition; Information...

  • Gain characteristics of strained quantum well lasers. Welch, D. F.; Streifer, W.; Schaus, C. F.; Sun, S.; Gourley, P. L. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p10 

    InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics