TITLE

Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition

AUTHOR(S)
Petruzzello, J.; Olego, D.; Ghandhi, S. K.; Taskar, N. R.; Bhat, I.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1423
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nature of dislocations in (001) CdTe-(001) GaAs heterostructures was investigated by transmission electron microscopy. The samples were grown by metalorganic chemical vapor deposition with CdTe layer thicknesses h ranging from 0.1 to 2.2 μm. The interface contains an array of misfit dislocations spaced about 31 Å apart, independent of h. These dislocations do not relax all of the lattice mismatch (14.6%) in the CdTe layers with h<1 μm. Above the interfaces, surface nucleated dislocations are observed in the CdTe layers and their density depends on h. No evidence of an oxide or foreign interface layer was found in these samples.
ACCESSION #
9823008

 

Related Articles

  • Microwave-Stimulated Relaxation of Internal Strains in GaAs-Based Device Heterostructures. Boltovets, N. S.; Kamalov, A. B.; Kolyadina, E. Yu.; Konakova, R. V.; Lytvyn, P. M.; Lytvyn, O. S.; Matveeva, L. A.; Milenin, V. V.; Rengevych, O. E. // Technical Physics Letters;Feb2002, Vol. 28 Issue 2, p154 

    We have studied the effect of microwave radiation (frequency, 2.45 GHz; specific power density, 1.5 W/cm²) on the relaxation of internal mechanical strains in the (i) n-n[sup +]-GaAs structures, (ii)Au-Ti-n-n[sup +]GaAs diode structures with Schottky barriers, and (iii) GaAs-based...

  • Nanorelief of an oxidized cleaved surface of a grid of alternating Ga[sub 0.7]Al[sub 0.3]As and GaAs heterolayers. Ankudinov, A. V.; Evtikhiev, V. P.; Tokranov, V. E.; Ulin, V. P.; Titkov, A. N. // Semiconductors;May99, Vol. 33 Issue 5, p555 

    The morphology of an oxidized cleaved surface of a grid of alternating GaAs and Ga[sub 0.7]Al[sub 0.3]As layers was investigated by atomic-force microscopy. It was found that the surface of the native oxide film on a cleaved surface possesses a quasistationary nanorelief that reflects the...

  • GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics. Solov’ev, V. A.; Toropov, A. A.; Meltser, B. Ya.; Terent’ev, Ya. A.; Kyutt, R. N.; Sitnikova, A. A.; Semenov, A. N.; Ivanov, S. V.; Motlan; Goldys, E. M.; Kop’ev, P. S. // Semiconductors;Jul2002, Vol. 36 Issue 7, p816 

    Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures...

  • Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures. Egorov, A. Yu.; Odnoblyudov, V. A.; Krizhanovskaya, N. V.; Mamutin, V. V.; Ustinov, V. M. // Semiconductors;Dec2002, Vol. 36 Issue 12, p1355 

    Triple GaAs/GaAsN/InGaAs heterostructures were grown by MBE on GaAs substrates, and their optical properties were studied. The band-edge line-up in GaAs/GaAsN and InGaAs/GaAsN heterostructures was analyzed by correlating the experimental photoluminescence spectra with the known parameters of the...

  • X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes. Anthes, J. P. // Review of Scientific Instruments;Aug1988, Vol. 59 Issue 8, p1846 

    Requirements for continuous operation of photodiodes in the presence of nuclear radiation has led to the development ora novel AlGaAs/GaAs photodiode. Device structure and semiconductor properties of this design were optimized to balance the need for photodetection at λ = 820 nm against...

  • Gallium arsenide-based QC laser emits at about 9.4...m. Roux, Roland // Laser Focus World;Oct98, Vol. 34 Issue 10, p18 

    Reports that unipolar-injection or quantum-cascade (QC) laser in a gallium arsenide-based heterostructure has been demonstrated by scientists at Central Laboratories of Thomson-CSF in Orsay, France. How QC lasers operate; Details on the QC laser.

  • Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure. Nguyen, T. D.; Kim, J. O.; Kim, Y. H.; Kim, E. T.; Nguyen, Q. L.; Lee, S. J. // AIP Advances;2018, Vol. 8 Issue 2, p1 

    We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in...

  • Infrared photoconductor fabricated with a molecular beam epitaxially grown CdTe/HgCdTe... Yuan, Shixin; He, Li; Yu, Jinbi; Yu, Meifang; Qiao, Yiming; Zhu, Jianmei // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p914 

    Describes infrared photoconductors fabricated with cadmium tellurium/mercury[sub 0.64] cadmium[sub 0.36] tellurium abrupt heterostructure grown on a gallium arsenide substrate. Description of the growth procedure, device fabrication, and measurement results; Reduction in interface states and...

  • Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures. Shealy, J. R.; Schaus, C. F.; Eastman, L. F. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p242 

    The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is reported. It was observed that different GaInP alloy compositions are required to lattice match films to AlGaAs and GaAs buffer layers for optimum results. Quantum well heterostructures with GaInP regions as...

  • Very low current threshold GaAs/Al0.5Ga0.5As double-heterostructure lasers grown by chemical beam epitaxy. Tsang, W. T. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p511 

    The first device performance of GaAs/AlxGa1-xAs double-heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities of ∼500 A/cm2 were obtained for wafers with active layer thicknesses of ∼500–1000 Å and confinement...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics