TITLE

Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperature

AUTHOR(S)
Matsusue, Toshio; Sakaki, Hiroyuki
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1429
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The radiative recombination coefficient B, defined by dN/dt=dP/dt≡-BNP, of two-dimensional free carriers, N and P, in a selectively doped GaAs/n-Al0.3Ga0.7As quantum well was determined in the temperature range T between 15 and 300 K by measuring the decay time τ of photoluminescence from the quantum well with electron density N0=1×1012/cm2. It is found that B(=1/τN0) is 1.1–1.9×10-4 cm2/s at 300 K and increases as T is lowered, reaching 2.3×10-3 cm2/s (τ∼0.43 ns) at 15 K. The initial increase of B is nearly proportional to 1/T, whereas B tends to saturate at low temperature. These experimental findings are shown to be well explained by the theory of band-to-band recombination of two-dimensional carriers in quantum wells.
ACCESSION #
9823003

 

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