Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperature

Matsusue, Toshio; Sakaki, Hiroyuki
May 1987
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1429
Academic Journal
The radiative recombination coefficient B, defined by dN/dt=dP/dt≡-BNP, of two-dimensional free carriers, N and P, in a selectively doped GaAs/n-Al0.3Ga0.7As quantum well was determined in the temperature range T between 15 and 300 K by measuring the decay time τ of photoluminescence from the quantum well with electron density N0=1×1012/cm2. It is found that B(=1/τN0) is 1.1–1.9×10-4 cm2/s at 300 K and increases as T is lowered, reaching 2.3×10-3 cm2/s (τ∼0.43 ns) at 15 K. The initial increase of B is nearly proportional to 1/T, whereas B tends to saturate at low temperature. These experimental findings are shown to be well explained by the theory of band-to-band recombination of two-dimensional carriers in quantum wells.


Related Articles

  • Photoluminescence measurement of the facet temperature of 1 W gain-guided AlGaAs/GaAs laser diodes. Rommel, J. M.; Gavrilovic, P.; Dabkowski, F. P. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6547 

    Examines the output facet temperature of high-power AlGaAs/gallium arsenide (GaAs) single quantum well laser diodes. Information on mirror facet heating; Factors attributed for the excess heating in AlGaAs devices; Techniques for the measurement of facet temperature; Analysis of two distinct...

  • Temperature dependence of cathodoluminescence from thin GaAs-AlGaAs multiple quantum wells. Jahn, U.; Menniger, J.; Hey, R.; Grahn, H.T. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2382 

    Examines the temperature dependence of cathodoluminescence (CL) intensity from gallium arsenide-aluminum gallium arsenide multiple quantum wells. Decline in CL intensity; Relation of activation energy to effective barrier height of electron/hole and exciton; Evidence of thermal re-emission of...

  • Erratum: "Deep level defects in n-type GaAsBi and GaAs grown at low temperatures" [J. Appl. Phys. 113, 133708 (2013)]. Mooney, P. M.; Watkins, K. P.; Zenan Jiang; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T. // Journal of Applied Physics;1/7/2015, Vol. 117 Issue 1, p019901-1 

    A correction to the article "Deep level defects in n-type GaAsBi and GaAs grown at low temperatures" is presented.

  • Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well. Ayzenshtat, G. I.; Bozhkov, V. G.; Yushchenko, A. Yu. // Russian Physics Journal;Feb2011, Vol. 53 Issue 9, p914 

    The dependence of the average electron-drift velocity on the electric field strength is measured for a twodimensional electron gas in a quantum well of an AlGaAs/InGaAs heterostructure in the temperature range 200-400 K. It is shown that the saturation velocity varies from 1.55·10 to...

  • Cryogenic-pressure response of optical transitions in quantum well and bulk GaAs: A direct comparative study. Weinstein, B. A.; Hark, S. K.; Burnham, R. D. // Journal of Applied Physics;12/15/1985, Vol. 58 Issue 12, p4662 

    Discusses the cryogenic-pressure response of optical transitions in quantum well and bulk gallium arsenide. Discrepancy between bulk and quantum well pressure coefficients; Comparison between quantum well and bulk pressure response; Temperature dependence of the photoluminescence peak energies...

  • The energy-fine structure of GaInNAs/GaAs multiple quantum wells grown at different temperatures and postgrown annealed. Kudrawiec, R.; Pavelescu, E.-M.; Andrzejewski, J.; Misiewicz, J.; Gheorghiu, A.; Jouhti, T.; Pessa, M. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2909 

    We report photoreflectance investigations of the energy-fine structure of GaInNAs/GaAs multiple quantum wells (MQWs) grown at different temperatures and postgrown treated by rapid thermal annealing (RTA). A “splitting” of the ground and excited QW transitious due to the presence of...

  • Effect of growth temperature on photoluminescence of GaNas/GaAs quantum well structures. Buyanova, I. A.; Chen, W. M. // Applied Physics Letters;12/13/1999, Vol. 75 Issue 24, p3781 

    Studies the effect of growth temperature on the optical properties of gallium arsenide (GaAs)/gallium nitrogen arsenide (GaNAs) quantum wells using photoluminescence spectroscopies. Growth temperature; Optical quality of the structures; Observed increase in intensity of the GaNAs-related...

  • Temperature dependence of electron-spin coherence in intrinsic bulk GaAs. Tianshu Lai; Xiaodong Liu; Haihong Xu; Zhongxing Jiao; Jinhui Wen; Weizhu Lin // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p192106 

    Temperature dependence of electron-spin coherence dynamics is investigated for an intrinsic bulk GaAs in the Voigt geometry using the elliptically polarized absorption quantum-beat spectroscopy. Temperature dependences of spin coherence and recombination lifetimes as well as g factor of...

  • Temperature dependence of the resistively detected electron spin resonance signals in a wide parabolic quantum well. Bowers, Clifford R.; Caldwell, Joshua D.; Gusev, Guennadii M. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p633 

    A resistively detected electron spin resonance study was conducted on a remotely Si-doped 400nm wide GaAs/AlAs digital parabolic quantum well in high parallel and perpendicular magnetic fields. The temperature dependences of the g-factor, esr linewidth and resonance line amplitude are compared...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics