Transient spectroscopy using the Hall effect

Kachwalla, Z.; Miller, D. J.
May 1987
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1438
Academic Journal
The Hall effect is used to measure the transient change in the carrier concentration in a semiconductor sample due to the thermal emission from states filled by a pulsed perturbation. This method has several advantages over other methods based on measuring the capacitance transient or the current transient. The identity of the released carriers can be determined from the sign of the Hall voltage. The new method is applied to the measurement of traps in epitaxial GaAs.


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