TITLE

Transient spectroscopy using the Hall effect

AUTHOR(S)
Kachwalla, Z.; Miller, D. J.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1438
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Hall effect is used to measure the transient change in the carrier concentration in a semiconductor sample due to the thermal emission from states filled by a pulsed perturbation. This method has several advantages over other methods based on measuring the capacitance transient or the current transient. The identity of the released carriers can be determined from the sign of the Hall voltage. The new method is applied to the measurement of traps in epitaxial GaAs.
ACCESSION #
9822999

 

Related Articles

  • A correlation between the enthalpy of mixing and the internal strain energy in the III-V alloy semiconductor system. Sonomura, H.; Uda, H.; Sugimura, A.; Ashida, A.; Horinaka, H.; Miyauchi, T. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4142 

    Deals with a study which compared the enthalpy of mixing and the internal strain energy in the III-V alloy semiconductor system. Calculation of the composition dependence of the enthalpy of mixing; Description of the isoenergy curves of the internal strain energies; Use of the perturbation...

  • Hot free-electron absorption in nonparabolic III-V semiconductors at mid-infrared wavelengths. Shkerdin, G.; Stiens, J. // Journal of Applied Physics;4/1/1999, Vol. 85 Issue 7, p3792 

    Proposes a screened nonparabolic hot electron model for the calculation of the free-electron absorption coefficient in nonparabolic III-V semiconductors. Details of the interaction mechanisms; Application of second order perturbation theory; Calculation of the overlap integrals.

  • Self-consistent calculation of intervalley deformation potentials in GaAs and Ge. Krishnamurthy, Srinivasan; Cardona, Manuel // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p2117 

    Provides information on electronic and structural properties of semiconductors. Use of ab initio tight-binding method and ad-hoc site diagonal potentials; Perturbation equation that enters in the calculation of matrix element; Tight-binding matrix element between orbitals.

  • Investigation of Self-Organization Processes in Semiconductor Under Photo-Gunn Effect. González-Hernández, J.; Vorobiev, Yu .V.; Horley, P. P.; Gorley, P. M. // Modern Physics Letters B;8/20/2001, Vol. 15 Issue 17/18/19, p712 

    In the given paper, the results are presented of the investigation of non-equilibrium stationary carders system in semiconductor under photo-Gunn effect. It was found that spacehomogeneous state of the system is unstable in the case of negative differential conductivity and two waves of...

  • In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain. Zhang, Z.; Fu, D. Y.; Zhang, R.; Liu, B.; Xie, Z. L.; Xiu, X. Q.; Han, P.; Zheng, Y. D.; Edwards, G. // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011901 

    The effects of anisotropic strain on wurtzite GaN valence subbands are investigated both theoretically and experimentally. k•p perturbation theory reveals that the in-plane asymmetric strain not only affects the transition energies, but also determines the polarization properties, which is...

  • Generalized perturbation analysis of distortion in semiconductor lasers. Haldar, M. K.; Kooi, P. S.; Mendis, F. V. C.; Guan, Y. L. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1102 

    Presents a study which conducted a generalized perturbation analysis of the second-order nonlinear equation for photon density for semiconductor lasers. Normalized rate equations; Derivation of the second-order differential equation for p; Third-order intermodulation and crossmodulation products.

  • Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures. Bilbro, Griff L.; Nemanich, Robert J. // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    We extend the usual one-dimensional equilibrium theory of the surface space charge region that screens a semiconductor from an external electric field in order to admit perturbations in three dimensions and time. We identify a class of perturbations of the one-dimensional equilibrium that grow...

  • Large area photodetector based on microwave cavity perturbation techniques. Braggio, C.; Carugno, G.; Lombardi, A.; Ruoso, G.; Sirugudu, R. K. // Journal of Applied Physics;2014, Vol. 116 Issue 4, p044513-1 

    We present a preliminary study to develop a large area photodetector, based on a semiconductor crystal placed inside a superconducting resonant cavity. Laser pulses are detected through a variation of the cavity impedance, as a consequence of the conductivity change in the semiconductor. A novel...

  • Charge injection at interfaces between molecularly doped polymer thin films. Klenkler, Richard A.; Xu, Gu; Popovic, Zoran D.; Graham, John F. // Applied Physics Letters;2/26/2007, Vol. 90 Issue 9, p092106 

    Charge injection between the active layers in organic semiconducting devices is a key determinant of device function. Accordingly, understanding the effect of intermixing between the layers at these interfaces is of fundamental importance. In this letter, via the use of the time-of-flight...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics