TITLE

Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces

AUTHOR(S)
Srinivasa, R.; Panish, M. B.; Temkin, H.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1441
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The orientation of CdTe grown epitaxially onto clean (100) GaAs by molecular beam epitaxy can be predetermined by the GaAs precursor surface reconstruction that is present where the CdTe growth is initiated. A Ga-stabilized GaAs starting surface yields CdTe (111) and an As-stabilized GaAs surface yields CdTe (100).
ACCESSION #
9822997

 

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