Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films

Carlos, W. E.
May 1987
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1450
Academic Journal
Electron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer. The 29Si central hyperfine interaction and the 29Si superhyperfine interaction with neighboring Si atoms are resolved. The results are very close to those for the Pb center at the Si-thermal oxide interface and recent theoretical calculations.


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