TITLE

Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon

AUTHOR(S)
Aboelfotoh, M. O.; Tawancy, H. M.; d’Heurle, F. M.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1453
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reaction of very thin (0.5–20 nm) layers of Ni with amorphous Si has been investigated by means of transmission electron microscopy and diffraction. The experiment, which is directly parallel to a previous study of similar samples prepared with Pd and Pt, has led to different observations. With Ni it is found that an amorphous Ni-Si solution is formed first, and that silicide formation, at temperatures which decrease with the amount of deposited Ni, results from the crystallization of that amorphous phase. With Pt and Pd microcrystalline silicides had been observed immediately.
ACCESSION #
9822991

 

Related Articles

  • Formation of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited... Cheng, J.Y.; Chen, L.J. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p45 

    Studies the formation of amorphous interlayers in ultrahigh-vacuum-deposited polycrystalline Nb and Ta thin films on Si(111) by cross-sectional transmission electron microscopy. Linear growth law followed by the growth of amorphous interlayers; Amorphous interlayer/crystalline silicon interface.

  • Substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates. Kleider, J. P.; Longeaud, C.; Barranco-Diaz, M.; Morin, P.; Roca i Cabarrocas, P. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p317 

    Presents a study which examined substrate temperature effect on the stability of hydrogenated amorphous silicon films deposited at high rates. Details of experimental techniques used; Deposition parameters for the films used in the study; Evolution of the defect density measured by two-point...

  • Influence of light soaking on surface- and bulk-spin densities in hydrogenated amorphous silicon. Zhang, Qing; Kumeda, Minoru; Shimizu, Tatsuo // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p1230 

    Presents a study which examined the influence of light soaking on surface-spin and bulk-spin densities in hydrogenated amorphous silicon films. Description of the spatial distribution of the spin density for both the annealed state and light-soaked state; Comparison of the thermal annealing...

  • Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field. Jang[a], Jin; Park, Seong Jin; Kim, Kyung Ho; Cho, Bong Rae; Kwak, Won Kyu; Yoon, Soo Young // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p3099 

    Studies the crystallization of amorphous silicon by Ni-silicide mediated crystallization in an electric field. Field-effect mobility of the thin film transistor; Presence of dendritic crystallites in the a-Si matrix without complete crystallization of a-Si when the Ni area density was 3.3 x...

  • Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film.... Hyuk-Ryeol Park; Dong-Sun Oh // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3135 

    Examines changes in the defect density of hydrogenated amorphous silicon in thin film transistor structures by bias stress. Method of measurement used; Discussion of the constant photocurrent method absorption; Demonstration of the experimental result on the bulk defect density.

  • Stability of hot-wire deposited amorphous-silicon thin-film transistors. Meiling, H.; Schropp, R. E. I. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1062 

    For the first time hydrogenated amorphous silicon, a-Si:H, deposited with the hot-wire technique is incorporated in thin-film transistors (TFTs). Amorphous silicon was deposited at a rate of 20 AËš/s. TFTs with a switching ratio of 105, a threshold voltage of 16.9 V, and a field-effect...

  • Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride. Kanicki, J.; Sankaran, M.; Gelatos, A.; Crowder, M. S.; Tober, E. D. // Applied Physics Letters;8/13/1990, Vol. 57 Issue 7, p698 

    We report for the first time on the stretched exponential time dependence of positive charge and spin generated by subband-gap ultraviolet illumination in gate-quality nitrogen-rich amorphous silicon nitride films. We have found that a stretched exponential function, which characterizes...

  • Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology. Makihira, Kenji; Asano, Tanemasa // Applied Physics Letters;6/19/2000, Vol. 76 Issue 25 

    A method to enhance crystal nucleation at controlled sites in solid-phase crystallization of amorphous Si is demonstrated. The method uses imprint with Ni-coated Si tips prior to conventional furnace annealing of amorphous Si films deposited on SiO[sub 2] substrates. The incubation time for...

  • Potential of amorphous silicon for solar cells. Rech, B.; Wagner, H. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 2, p155 

    Abstract. This paper reviews recent developments in the field of amorphous-silicon-based thin-film solar cells and discusses potentials for further improvements. Creative efforts in materials research, device physics, and process engineering have led to highly efficient solar cells based on...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics