Determination of the atomic configuration at semiconductor interfaces

Ourmazd, A.; Tsang, W. T.; Rentschler, J. A.; Taylor, D. W.
May 1987
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1417
Academic Journal
We describe an approach based on high-resolution transmission electron microscopy (HRTEM), which is capable of directly and sensitively revealing the atomic configuration at compound semiconductor/semiconductor interfaces, and thus show that interfaces normally regarded as atomically smooth can contain significant roughness. Our technique establishes that HRTEM can simultaneously provide chemical and structural information on an atomic scale.


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