Activation ratio of Fe in Fe-doped semi-insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition

Sugawara, M.; Kondo, M.; Nakai, K.; Yamaguchi, A.; Nakajima, K.
May 1987
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1432
Academic Journal
The activation ratio of Fe atoms introduced in semi-insulating (SI) InP layers grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) has been investigated, employing the current-voltage characteristics of n+-SI-n+ InP diodes and secondary ion mass spectroscopy analysis. The result indicates that most Fe atoms in LPE-grown SI layers are electrically active as deep acceptors; however, a large amount of unactivated Fe atoms are present in MOCVD-grown SI layers. This difference between the two kinds of Fe-doped SI layers can be attributed to the difference in the growth mechanisms of LPE and MOCVD.


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