TITLE

Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon

AUTHOR(S)
Burger, W. R.; Reif, R.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1447
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter we report for the first time the fabrication of bulk-quality bipolar transistors in low-temperature (Tdep =800 °C) epitaxial silicon. The epitaxial layers were deposited by an ultra-low pressure chemical vapor deposition technique utilizing an in situ predeposition argon sputter clean. The critical parameter affecting the quality of the epitaxial films is the deposition temperature. The junction leakage current decreases by two orders of magnitude, the ideality factor improves from 1.36 to 1.04, and the minority-carrier lifetime increases from 1.3 to 46 μs as the deposition temperature is increased from 750 to 800 °C. Analysis of the base-emitter and base-collector junction characteristics indicates that bipolar transistors fabricated in epitaxial films deposited at 800 °C have characteristics at least as good as control fabricated in bulk silicon.
ACCESSION #
9822976

 

Related Articles

  • Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si-implanted InP substrates by molecular beam epitaxy. Dodabalapur, A.; Chang, T. Y.; Tell, B.; Brown-Goebeler, K. F. // Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2449 

    Focuses on a study which described the procedures to grow InAIAs/InGaAs and InGaAIAs/InGaAs heterojunction bipolar transistors (HBT) on silicon-implanted InP substrates by molecular beam epitaxy. Implantation of the silicon with the InP substrate; Growth process of the HBT structures; Summary...

  • Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambient. Friedrich, J. A.; Neudeck, G. W.; Liu, S. T. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2543 

    Basic chemical equilibrium data for the Si/SiO2/O2/H2O system have been employed to compute critical epitaxial preclean and growth parameters. Preclean and growth experiments were conducted and compared with predicted behavior. A procedure is given that allows for the design of an epitaxial...

  • Characterization of AlGaAs/GaAs heterojunction bipolar transistors and circuits by localized filtered low-temperature cathodoluminescence. Dubon-Chevallier, C.; Papadopoulo, A. C.; Bresse, J. F.; Duchenois, A. M. // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2603 

    Deals with a study which used cathodoluminescence performed at low temperature for the characterization of the fabrication technology of circuits implemented with heterojunction bipolar transistors. Experimental procedure; Determination of specific emission parameters; Conclusion.

  • Double-polysilicon self-aligned lateral bipolar transistors. Pengpad, P.; Bagnall, D. M. // Journal of Materials Science: Materials in Electronics;Feb2008, Vol. 19 Issue 2, p183 

    A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned structure to maximise high-frequency performance is introduced. Silicon-on-oxide (SOI) wafers are used to isolate devices from the substrate and to minimise parasitic substrate capacitances (CJCS0) around...

  • A Novel Schottky Collector Lateral Bipolar Junction Transistor on Silicon on Insulator. LOAN, SAJAD A. // Journal of Active & Passive Electronic Devices;2014, Vol. 9 Issue 4, p281 

    An important motivation for Schottky collector or metal collector bipolar junction transistors is to overcome the series resistance problem in pure semiconductor base bipolar transistors. The other two advantages of low temperature processing and the absence of dopant fluctuations in the...

  • Continuous growth of heavily doped p+-n+ Si epitaxial layer using low-temperature photoepitaxy. Yamazaki, Tatsuya; Minakata, Hiroshi; Ito, Takashi // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p879 

    Heavily doped p+ and n+ silicon epitaxial layers were continuously grown at 600 °C using photoenhanced epitaxy. The heavily phosphorus-doped photoepitaxial layer with a carrier concentration above 1×1017 cm-3 grown on the p- substrate shows very high density surface pits due to phosphorus...

  • Low-temperature Si(001) epitaxy using low-energy (...18 eV) Si atoms. Lee, N.-E.; Tomasch, G.A. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3236 

    Presents study results on the low temperature epitaxy of silicon(001) using hyperthermal silicon condensing particles. Use of an ultrahigh vacuum ion beam sputter deposition system; Effects of the use of energetic rather than thermal beams; Increase in the epitaxial thickness of the substrates...

  • Low temperature (313 degrees C) silicon epitaxial growth by plasma-enhanced chemical vapor.... Ming-Deng Shieh; Chiapyng Lee; Cheng-Hsein Chen; Tri-Rung Yew; Chung-Yuan Kung // Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1252 

    Examines the low temperature silicon epitaxial growth on p-type, silicon wafers by plasma enhanced chemical vapor sediment with stainless steel mesh. Effect of modified ex situ spin-etch cleaning and in situ hydrogen baking step on epitaxial growth; Relation between epitaxial film and silane...

  • Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry. Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p586 

    Focuses on a study that characterized Si[subx]Ge[sub1-x]/silicon heterostructures for device applications using spectroscopic ellipsometry (SE). Characterization of heterojunction bipolar transistor material; Preparation of the samples grown on silicon substrates by molecular beam expitaxy;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics