TITLE

Profile control of SiH radicals by cross magnetic field in plasma processing

AUTHOR(S)
Fujiyama, H.; Yamashita, T.; Takahashi, T.; Matsuo, H.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1322
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The distributions of optical emission intensity along the discharge axis in multiple-parallel-plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time-averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH* was possible by varying the field strength. The emission intensity of SiH* was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large-area substrate outside the multielectrodes uniform and can enhance the deposition rate.
ACCESSION #
9822960

 

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