Profile control of SiH radicals by cross magnetic field in plasma processing

Fujiyama, H.; Yamashita, T.; Takahashi, T.; Matsuo, H.
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1322
Academic Journal
The distributions of optical emission intensity along the discharge axis in multiple-parallel-plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time-averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH* was possible by varying the field strength. The emission intensity of SiH* was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large-area substrate outside the multielectrodes uniform and can enhance the deposition rate.


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