Study of the moving species in ion-induced reactions

Tao, K.; Hewett, C. A.; Lau, S. S.; Buchal, Ch.; Poker, D. B.
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1343
Academic Journal
We present evidence in this study that the moving species under ion mixing conditions are affected by the implantation damage distribution in the sample. This observation holds for metal-semiconductor, metal-metal, and semiconductor-semiconductor systems. The direction of thermal annealing atomic transport appears to play a role in ion mixing as well. When these two factors are in the same direction, only one dominant moving species is observed. When these two factors are in opposite directions, both constituents can contribute to the atomic transport in ion mixing.


Related Articles

  • Reduction of secondary defect density by C and B implants in Ge[sub x]Si[sub 1-x] layers formed.... Lombardo, S.; Priolo, F.; Campisano, S.U.; Lagomarsino, S. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2335 

    Describes the reduction of secondary defect density in Ge[sub x]Si[sub 1-x] layers by carbon and boron implantation. Production of the layers by high dose germanium ion implantation in (100) silicon substrate; Effect of rapid thermal annealing on the layer; Use of transmission electron...

  • Observation of a delocalized E' center in buried SiO[sub 2]. Vanheusden, K.; Stesmans, A. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2405 

    Examines the oxygen-vacancy defects generated at the surface of buried silica layers of the separation by oxygen structure implantation. Use of K-band electron spin resonance; Identification of a delocalized variant of the defect center; Correlation between the defects and substrate bias...

  • Evolution of point to extended defects in low-temperature implanted Hg0.76Cd0.24Te. Richter, V.; Kalish, R. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6578 

    Presents a study which investigated the evolution of point to extended defects in low-temperature ion-implanted Hg[sub1-x]Cd[subx]Te. Details of experimental techniques used; Characterization of HgCdTe damages induced by room-temperature ion implantation; Reason for the diffusion of atoms in...

  • Spin–orbit effects in the luminescent charge-transfer reaction F++CO. Ottinger, Ch.; Reichmuth, J.; Zimmermann, S.; Kusunoki, I.; Shiraishi, Y. // Journal of Chemical Physics;12/15/1992, Vol. 97 Issue 12, p9138 

    In an ion beam study of the luminescent charge-transfer reaction F+(3P0,1,2)+CO(X 1Σ+)→F(2P1/2,3/2) +CO+(A 2Π1/2,3/2), the product CO+(A) emission spectra have been examined at a collision energy of 11.9 eVCM, using high (∼1 Å FWHM) optical resolution. For the near-resonant...

  • Trajectory calculations of ion–molecule momentum transfer rate constants. Liu, Jing; Su, Timothy // Journal of Chemical Physics;11/1/1991, Vol. 95 Issue 9, p6471 

    A classical trajectory method is used to calculate thermal energy momentum transfer rate constants for ions in polar and nonpolar gases. The calculations include the consideration of noncapture scattering. For ions in nonpolar gases, the anisotropy of the polarizability and the...

  • Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation. Ajmera, A. C.; Rozgonyi, G. A.; Fair, R. B. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p813 

    A comparison has been made between two shallow preamorphization techniques using Si+ and Ge+ implantation, followed by B+ implantation and rapid thermal annealing (RTA). The subsequent impact on boron diffusion profiles and extended defects have been examined experimentally with secondary ion...

  • Dependence of ion implantation: Induced defects on substrate doping. Kanemoto, Kei; Imaizumi, Fuminobu; Hamada, Tatsufumi; Tamai, Yukio; Nakada, Akira; Ohmi, Tadahiro // Journal of Applied Physics;3/15/2001, Vol. 89 Issue 6, p3156 

    The characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of the substrate dopant species (phosphorus and...

  • A slow positron beam study of vacancy formation in fluorine-implanted silicon. Fujinami, M.; Chilton, N. B. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3242 

    Discusses the results of a study on vacancy formation in fluorine-implanted silicon using a slow positron beam. Consequence of positron diffusion and the breadth of the positron implantation profile; Implications of the vacancies caused by ion implantation; Techniques used in demonstrating the...

  • Dissociation of relativistic Be nuclei through the He+He channel on a proton target. Alexandrov, Yu.; Peresadko, N.; Gerasimov, S.; Dronov, V.; Pisetskaya, A.; Fetisov, V.; Kharlamov, S.; Shesterkina, L. // Physics of Atomic Nuclei;May2015, Vol. 78 Issue 3, p363 

    The differential cross section for the interaction of Be nuclei with protons was measured in the momentum-transfer region extending up to a value of 0.5 GeV/ c at which Be decay to He and He fragments was not accompanied by the emergence of other charged particles. In the momentum-transfer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics