Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction

Muralt, P.; Meier, H.; Pohl, D. W.; Salemink, H. W. M.
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1352
Academic Journal
The potential distribution across the cleaved end face of a forward-biased GaAs double heterojunction laser diode was mapped using scanning tunneling potentiometry. Space-charge regions next to the heterojunction interface as well as the electron-hole recombination region within the active layer are outlined with nanometer resolution. The carrier injection zone in the active layer is observed as a function of junction voltage.


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